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We report the time resolution of 100 $rm mu m$ 4H-SiC PIN detectors which are fabricated by Nanjing University (NJU). The time responses for $rm beta$ particle from $rm ^{90}$Sr source are investigated for the detection of the minimum ionizing particles (MIPs). The influences of different reverse voltages which correspond to carrier velocity and device sizes which correlate with capacitance for time resolution are studied. We acquired a time resolution (94$pm$1) ps for 100 $rm mu m$ 4H-SiC PIN detector. A fast simulation software - RASER (RAdiation SEmiconductoR) has been developed to simulate the time resolution of 4H-SiC detector, and the simulation has been validated by the waveform comparison of RASER simulation and measured data. The simulated time resolution is (53 $pm$ 1) ps after consider the intrinsic leading contributions of detector in time resolution.
A new timing detector measuring ~50 MeV/c positrons is under development for the MEG II experiment, aiming at a time resolution $sigma_t sim 30~mathrm{ps}$. The resolution is expected to be achieved by measuring each positron time with multiple count
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps w
In a neutrinoless double-beta decay ($0 ubetabeta$) experiment, energy resolution is important to distinguish between $0 ubetabeta$ and background events. CAlcium fluoride for studies of Neutrino and Dark matters by Low Energy Spectrometer (CANDLES)
Timing-pick up detectors with excellent timing resolutions are essential in many modern nuclear physics experiments. Aiming to develop a Time-Of-Flight system with precision down to about 10 ps, we have made a systematic study of the timing character
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias volt