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Motivated by the recent successful formation of the MoSi2N4 monolayer [Hong et al., Sci. 369, 670 (2020)], the structural, electronic and magnetic properties of MoSi2N4 nanoribbons (NRs) is investigated for the first time . The band structure calculations showed spin-polarization in zigzag edges and a non-magnetic semiconducting character in armchair edges. For armchair-edges, we identify an indirect to direct band gap shift compared to the MoSi2N4 monolayer, and its energy gap increases with increasing NR width. Anisotropic electrical and magnetic behavior is observed via band structure calculations in the zigzag and armchair edges, where, surprisingly, for the one type of zigzag-edges configuration, we identify a Dirac-semimetal character. The appearance of magnetism and Dirac-semimetal in MoSi2N4 ribbon can give rise to novel physical properties, which could be useful in applications for next-generation electronic devices.
Besides its predicted promising high electron mobilities at room temperature, PtSe2 bandgap sensitively depends on the number of monolayers combined by van der Waals interaction according to our calculations. We understand this by using bandstructure
The electronic and transport properties of hybrid armchair zigzag nanostructures including U-shaped graphene nanoribbons and patterned nanopores structured graphene were studied using combination of density functional theory and non-equilibrium Green
By band engineering the iron chalcogenide Fe(Se,Te) via ab-initio calculations, we search for topological surface states and realizations of Majorana bound states. Proposed topological states are expected to occur for non-stoichiometric compositions
There has been tremendous interest in manipulating electron and hole-spin states in low-dimensional structures for electronic and spintronic applications. We study the edge magnetic coupling and anisotropy in zigzag stanene nanoribbons, by first-prin
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type doping. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is reali