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In the close vicinity of a hot solid, at distances smaller than the thermal wavelength, a strong electromagnetic energy density exists because of the presence of evanescent field. Here we explore the possibility to harvest this energy using graphene-based pyroelectric conversion devices made with an active layer encapsulated between two graphene field-effect transistors (GFETs) deposited on the source and on the cold sink. By tuning the bias voltage applied to the gates of these transistors, the thermal state and the spontaneous polarization of the active layer can be controlled at kHz frequencies. We demonstrate that the power density generated by these conversion systems can reach 1300 W/m^2 using pyroelectric Ericsson cycles, a value which surpasses the current production capacity of near-field thermophotovoltaic conversion devices by more than five orders of magnitude with low grade heat sources (T<500 K) and small temperature differences (DT~100 K).
Graphene is a unique material to study fundamental limits of plasmonics. Apart from the ultimate single-layer thickness, its carrier concentration can be tuned by chemical doping or applying an electric field. In this manner the electrodynamic proper
The interplay of spin angular momentum and thermal radiation is a frontier area of interest to nanophotonics as well as topological physics. Here, we show that a thick planar slab of a nonreciprocal material, despite being at thermal equilibrium with
We present combined experimental and numerical work on light-matter interactions at nanometer length scales. We report novel numerical simulations of near-field infrared nanospectroscopy that consider, for the first time, detailed tip geometry and ha
The performance of field effect transistors based on an single graphene ribbon with a constriction and a single back gate are studied with the help of atomistic models. It is shown how this scheme, unlike that of traditional carbon-nanotube-based tra
The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional