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Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate high-quality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analyzed. The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO2 or Si2N3 dielectric mask at the interface can only improve it to ~10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.
By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operatin
Lead halide perovskite based micro- and nano- lasers have been widely studied in past two years. Due to their long carrier diffusion length and high external quantum efficiency, lead halide perovskites have been considered to have bright future in op
We review principles and trends in the use of semiconductor nanowires (NWs) as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as LEDs, solar
Solution-processed lead halide perovskites have shown very bright future in both solar cells and microlasers. Very recently, the nonlinearity of perovskites started to attract considerable research attention. Second harmonic generation and two-photon
Vertical cavity surface emitting lasers (VCSELs) have made indispensable contributions to the development of modern optoelectronic technologies. However, arbitrary beam shaping of VCSELs within a compact system still remains inaccessible till now. Th