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With a combination of numerical methods, including quantum Monte Carlo, exact diagonalization, and a simplified dynamical mean-field model, we consider the attosecond charge dynamics of electrons induced by strong-field laser pulses in two-dimensional Mott insulators. The necessity to go beyond single-particle approaches in these strongly correlated systems has made the simulation of two-dimensional extended materials challenging, and we contrast their resulting high-harmonic emission with more widely studied one-dimensional analogues. As well as considering the photo-induced breakdown of the Mott insulating state and magnetic order, we also resolve the time and ultra-high frequency domains of emission, which are used to characterize both the photo-transition, and the sub-cycle structure of the electron dynamics. This extends simulation capabilities and understanding of the photo-melting of these Mott insulators in two-dimensions, at the frontier of attosecond non-equilibrium science of correlated materials.
Using Floquet dynamical mean-field theory, we study the high-harmonic generation in the time-periodic steady states of wide-gap Mott insulators under AC driving. In the strong-field regime, the harmonic intensity exhibits multiple plateaus, whose cut
We study the high harmonic generation (HHG) in Mott insulators using Floquet dynamical mean-field theory (DMFT). We show that the main origin of the HHG in Mott insulators is the doublon-holon recombination, and that the character of the HHG spectrum
We study high-harmonic generation (HHG) in the one-dimensional Hubbard model in order to understand its relation to elementary excitations as well as the similarities and differences to semiconductors. The simulations are based on the infinite time-e
The high harmonic spectrum of the Mott insulating Hubbard model has recently been shown to exhibit plateau structures with cutoff energies determined by $n$th nearest neighbor doublon-holon recombination processes. The spectrum thus allows to extract
We study third-harmonic generation (THG) in an excitonic insulator (EI) described in a two-band correlated electron model. Employing the perturbative expansion with respect to the external electric field, we derive the THG susceptibility taking into