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Artificial neural networks are a valuable tool for radio-frequency (RF) signal classification in many applications, but digitization of analog signals and the use of general purpose hardware non-optimized for training make the process slow and energetically costly. Recent theoretical work has proposed to use nano-devices called magnetic tunnel junctions, which exhibit intrinsic RF dynamics, to implement in hardware the Multiply and Accumulate (MAC) operation, a key building block of neural networks, directly using analogue RF signals. In this article, we experimentally demonstrate that a magnetic tunnel junction can perform multiplication of RF powers, with tunable positive and negative synaptic weights. Using two magnetic tunnel junctions connected in series we demonstrate the MAC operation and use it for classification of RF signals. These results open the path to embedded systems capable of analyzing RF signals with neural networks directly after the antenna, at low power cost and high speed.
Exploiting the physics of nanoelectronic devices is a major lead for implementing compact, fast, and energy efficient artificial intelligence. In this work, we propose an original road in this direction, where assemblies of spintronic resonators used
Magnetic tunnel junctions operating in the superparamagnetic regime are promising devices in the field of probabilistic computing, which is suitable for applications like high-dimensional optimization or sampling problems. Further, random number gene
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for e
Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However, the manipula
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias dependence of tun