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In this work, we performed extensive first-principles simulations of high-harmonic generation in the topological Diract semimetal Na3Bi using a time-dependent density functional theory framework, focusing on the effect of spin-orbit coupling (SOC) on the harmonic response. We also derived a general analytical model describing the microscopic mechanism of strong-field dynamics in presence of spin-orbit coupling, starting from a locally U(1)xSU(2) gauge-invariant Hamiltonian. Our results reveal that SOC: (i) affects the strong-field ionization by modifying the bandstructure of Na3Bi, (ii) modifies the electron velocity, making each spin channel to react differently to the pump laser field, (iii) changes the emission timing of the emitted harmonics. Moreover, we show that the SOC affects the harmonic emission by directly coupling the charge current to the spin currents, paving the way to the high-harmonic spectroscopy of spin currents in solids.
Three-dimensional (3D) topological Dirac semimetals (TDSs) represent a novel state of quantum matter that can be viewed as 3D graphene. In contrast to two-dimensional (2D) Dirac fermions in graphene or on the surface of 3D topological insulators, TDS
We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We
The topological nodal-line semimetals (NLSMs) possess a loop of Dirac nodes in the k space with linear dispersion, different from the point nodes in Dirac/Weyl semimetals. While the quantum transport associated with the topologically nontrivial Dirac
Three-dimensional (3D) topological Dirac semimetal, when thinned down to 2D few layers, is expected to possess gapped Dirac nodes via quantum confinement effect and concomitantly display the intriguing quantum spin Hall (QSH) insulator phase. However
Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding 7,000 cm$^2