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تسجيل مستخدم جديدNonlinear optical Hall effect in Weyl semimetal WTe2
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The ordinary Hall effect refers to generation of a transverse voltage upon exertion of an electric field in the presence of an out-of-plane magnetic field. While a linear Hall effect is commonly observed in systems with breaking time-reversal symmetry via an applied external magnetic field or their intrinsic magnetization1, 2, a nonlinear Hall effect can generically occur in non-magnetic systems associated with a nonvanishing Berry curvature dipole3. Here we report, observations of a nonlinear optical Hall effect in a Weyl semimetal WTe2 without an applied magnetic field at room temperature. We observe an optical Hall effect resulting in a polarization rotation of the reflected light, referred to as the nonlinear Kerr rotation. The nonlinear Kerr rotation linearly depends on the charge current and optical power, which manifests the fourth-order nonlinearity. We quantitatively determine the fourth-order susceptibility, which exhibits strong anisotropy depending on the directions of the charge current and the light polarization. Employing symmetry analysis of Berry curvature multipoles, we demonstrate that the nonlinear Kerr rotations can arise from the Berry curvature hexapole allowed by the crystalline symmetries of WTe2. There also exist marginal signals that are incompatible with the symmetries, which suggest a hidden phase associated with the nonlinear process.
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The Hall effect occurs only in systems with broken time-reversal symmetry, such as solids under an external magnetic field in the ordinary Hall effect and magnetic materials in the anomalous Hall effect (AHE). Here we show a new Hall effect in a nonm
agnetic material under zero magnetic field, in which the Hall voltage depends quadratically on the longitudinal current. We observe the effect (referred to as nonlinear AHE) in two-dimensional Td-WTe2, a semimetal with broken inversion symmetry and only one mirror line in the crystal plane. Our angle-resolved electrical measurements reveal that the Hall voltage changes sign when the bias current reverses direction; it maximizes (vanishes) when the bias current is perpendicular (parallel) to the mirror line. The observed effect can be understood as an AHE induced by the bias current which generates an out-of-plane magnetization. The temperature dependence of the Hall conductivity further suggests that both intrinsic Berry curvature dipole and extrinsic spin-dependent scatterings contribute to the observed nonlinear AHE. Our results open the possibility of exploring the intrinsic Berry curvature effect in nonlinear electrical transport in solids .
Quantum topological materials, exemplified by topological insulators, three-dimensional Dirac semimetals and Weyl semimetals, have attracted much attention recently because of their unique electronic structure and physical properties. Very lately it
is proposed that the three-dimensional Weyl semimetals can be further classified into two types. In the type I Weyl semimetals, a topologically protected linear crossing of two bands, i.e., a Weyl point, occurs at the Fermi level resulting in a point-like Fermi surface. In the type II Weyl semimetals, the Weyl point emerges from a contact of an electron and a hole pocket at the boundary resulting in a highly tilted Weyl cone. In type II Weyl semimetals, the Lorentz invariance is violated and a fundamentally new kind of Weyl Fermions is produced that leads to new physical properties. WTe2 is interesting because it exhibits anomalously large magnetoresistance. It has ignited a new excitement because it is proposed to be the first candidate of realizing type II Weyl Fermions. Here we report our angle-resolved photoemission (ARPES) evidence on identifying the type II Weyl Fermion state in WTe2. By utilizing our latest generation laser-based ARPES system with superior energy and momentum resolutions, we have revealed a full picture on the electronic structure of WTe2. Clear surface state has been identified and its connection with the bulk electronic states in the momentum and energy space shows a good agreement with the calculated band structures with the type II Weyl states. Our results provide spectroscopic evidence on the observation of type II Weyl states in WTe2. It has laid a foundation for further exploration of novel phenomena and physical properties in the type II Weyl semimetals.
Using Hall photovoltage measurements, we demonstrate that an anomalous Hall-voltage can be induced in few layer WTe2 under circularly polarized light illumination. By applying a bias voltage along different crystal axes, we find that the photo-induce
d anomalous Hall conductivity coincides with a particular crystal axis. Our results are consistent with the underlying Berry-curvature exhibiting a dipolar distribution due to the breaking of crystal inversion symmetry. Using a time-resolved optoelectronic auto-correlation spectroscopy, we find that the decay time of the anomalous Hall voltage exceeds the electron-phonon scattering time by orders of magnitude but is consistent with the comparatively long spin-lifetime of carriers in the momentum-indirect electron and hole pockets in WTe2. Our observation suggests, that a helical modulation of an otherwise isotropic spin-current is the underlying mechanism of the anomalous Hall effect.
We carried out point contact (PC) investigation of WTe2 single crystals. We measured Yanson d2V/dI2 PC spectra of the electron-phonon interaction (EPI) in WTe2. The spectra demonstrate a main phonon peak around 8 meV and a shallow second maximum near
16 meV. Their position is in line with the calculation of the EPI spectra of WTe2 in the literature, albeit phonons with higher energy are not resolved in our PC spectra. An additional contribution to the spectra is present above the phonon energy, what may be connected with the peculiar electronic band structure and need to be clarified. We detected tiny superconducting features in d2V/dI2 close to zero bias, which broadens by increasing temperature and blurs above 6K. Thus, (surface) superconductivity may exist in WTe2 with a topologically nontrivial state. We found a broad maximum in dV/dI at large voltages (>200 mV) indicating change of conductivity from metallic to semiconducting type. The latter might be induced by the high current density (~10^8 A/cm^2) in the PC and/or local heating, thus enabling the manipulation of the quantum electronic states at the interface in the PC core.
Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivia
l materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harvesting arising from their gapless linear dispersion near Weyl nodes and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation from charge separation of photoexctied electron-hole pairs at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. Using scanning photocurrent microscopy (SPCM) measurements, we further demonstrate that the edge current response is robust over a wide excitation photon energy. We find that this robust feature is highly generic, and shall arise universally in a wide class of quantum materials with similar crystal symmetries. In addition, possible connections between these edge photocurrents and topological properties of Weyl semimetals are explored. The robust and generic edge current response demonstrated in this work provides a new type of charge separation mechanism for photosensing and energy harvesting over broad wavelength range.
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