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In insulators, Born effective charges describe the electrical polarization induced by the displacement of individual atomic sublattices. Such a physical property is at first sight irrelevant for metals and doped semiconductors, where the macroscopic polarization is ill-defined. Here we show that, in clean conductors, going beyond the adiabatic approximation results in nonadiabatic Born effective charges that are well defined in the low-frequency limit. In addition, we find that the sublattice sum of the nonadiabatic Born effective charges does not vanish as it does in the insulating case, but instead is proportional to the Drude weight. We demonstrate these formal results with density functional perturbation theory calculations of Al, and electron-doped SnS$_2$ and SrTiO$_3$.
We present an application of the Lorentz model in which fits to vibrational spectra or a Kramers Kronig analysis are employed along with several useful formalisms to quantify microscopic charge in unoriented (powdered) materials. The conditions under
We report first principles density functional calculations of the Born effective charges and electronic dielectric tensors for the relaxor PMN (PbMg1/3Nb2/3O3). Visualization of the Born charge tensors as charge ellipsoids have provided microscopic i
Since the first realization of reversible charge doping in graphene via field-effect devices, it has become evident how the induction a gap could further enhance its potential for technological applications. Here we show that the gap opening due to a
We establish a general connection between ballistic and diffusive transport in systems where the ballistic contribution in canonical ensemble vanishes. A lower bound on the Green-Kubo diffusion constant is derived in terms of the curvature of the ide
Integrable models such as the spin-1/2 Heisenberg chain, the Lieb-Liniger or the one-dimensional Hubbard model are known to avoid thermalization, which was also demonstrated in several quantum-quench experiments. Another dramatic consequence of integ