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We propose a mechanism to substantially rectify radiative heat flow by matching thin films of metal-to-insulator transition materials and polar dielectrics in the electromagnetic near field. By leveraging the distinct scaling behaviors of the local density of states with film thickness for metals and insulators, we theoretically achieve rectification ratios over 140-a 10-fold improvement over the state of the art-with nanofilms of vanadium dioxide and cubic boron nitride in the parallel-plane geometry at experimentally feasible gap sizes (~100 nm). Our rational design offers relative ease of fabrication, flexible choice of materials, and robustness against deviations from optimal film thicknesses. We expect this work to facilitate the application of thermal diodes in solid-state thermal circuits and energy conversion devices.
Hyperbolic metamaterials (HMMs) support propagating waves with arbitrarily large wavevectors over broad spectral ranges, and are uniquely valuable for engineering radiative thermal transport in the near field. Here, by employing a rational design app
Taking advantage of phase-transition and reconfigurable metamaterials, dynamic control of nanoscale thermal modulation can be achieved through the near-field radiative thermal rectification devices. In this work, an active-tuning near-field thermal r
In this Letter we experimentally demonstrate that the radiative heat transfer between metallic planar surfaces exceeds the blackbody limit by employing the near-field and thin-film effects. Nanosized polystyrene particles were used to create a nanome
We report the tunability of the exchange bias effect by the first-order metal-insulator transition (known as the Verwey transition) of Fe3O4 in CoO (5 nm)/Fe3O4 (40 nm)/MgO (001) thin film. In the vicinity of the Verwey transition, the exchange bias
We study in this article how heat can be exchanged between two level systems (TLS) each of them being coupled to a thermal reservoir. Calculation are performed solving a master equation for the density matrix using the Born markov-approximation. We a