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We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca2CuO2Cl2 parent Mott insulator of cuprates. We find that when the two dopants approach each other, the transfer of spectral weight from high energy Hubbard band to low energy in-gap state creates a broad peak and nearly V-shaped gap around the Fermi level. The peak position shows a sudden drop at distance around 4 a0 and then remains almost constant. The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice. These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.
Although the mechanism of superconductivity in the cuprates remains elusive, it is generally agreed that at the heart of the problem is the physics of doped Mott insulators. The cuprate parent compound has one unpaired electron per Cu site, and is pr
Unusual transport properties of superconducting (SC) materials, such as the under doped cuprates, low dimensional superconductors in strong magnetic fields, and insulating films near the Insulator Superconductor Transition (IST), have been attributed
When periodicity of crystal is disturbed by atomic disorder, its electronic state becomes inhomogeneous and band dispersion is obscured. In case of Fe-based superconductors, disorder of chalcogen/pnictogen height causes disorder of Fe 3d level splitt
Because the cuprate superconductors are doped Mott insulators, it would be advantageous to solve even a toy model that exhibits both Mottness and superconductivity. We consider the Hatsugai-Kohmoto model, an exactly solvable system that is a prototyp
We present a systematic study of spin dynamics in a superconducting ground state, which itself is a doped-Mott-insulator and can correctly reduce to an antiferromagnetic (AF) state at half-filling with an AF long-range order (AFLRO). Such a doped Mot