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A spin current through a ferromagnet/heavy-metal interface may shrink due to the spin-flip at the interface, resulting in the spin-memory loss. Here we propose a mechanism of the spin-memory loss. In contrast to other mechanisms based on interfacial spin-orbit coupling, our mechanism is based on the bulk spin-orbit coupling in a heavy-metal. We demonstrate that the bulk spin-orbit coupling induces the entanglement between the spin and orbital degrees of freedom and this spin-orbital entanglement can give rise to sizable spin-flip at the interface even when the interfacial spin-orbit coupling is weak. Our mechanism emphasizes crucial roles of the atomic orbital degree of freedom and induces the strong spin-memory loss near band crossing points between bands of different orbital characters.
Spin-memory loss (SML) of electrons traversing ferromagnetic-metal/heavy-metal (FM/HM), FM/normal-metal (FM/NM) and HM/NM interfaces is a fundamental phenomenon that must be invoked to explain consistently large number of spintronic experiments. Howe
Spin-orbit coupling (SOC) describes the relativistic interaction between the spin and momentum degrees of freedom of electrons, and is central to the rich phenomena observed in condensed matter systems. In recent years, new phases of matter have emer
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The electric-field tunable Rashba spin-orbit coupling at the LaAlO3/SrTiO3 interface shows potential applications in spintronic devices. However, different gate dependence of the coupling strength has been reported in experiments. On the theoretical
The existence of a spin-orbit coupling (SOC) induced by the gradient of the effective mass in low-dimensional heterostructures is revealed. In structurally asymmetric quasi-two-dimensional semiconductor heterostructures the presence of a mass gradien