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The Kondo effect typically arises from the spin-flip scattering between the localized magnetic moment of the impurity and the delocalized electrons in the metallic host, which leads to a variety of intriguing phenomena. Here, by using scanning tunnelling microscopy/spectroscopy (STM/STS), we present the Kondo effect and subatomic features of single U adatom on graphene/6H-SiC(0001). A dip spectral feature can be observed around the Fermi energy, which is termed as the fingerprint of the Kondo resonance in STS; in addition, two subatomic features with different symmetries: a three-lobe structure and a donghnut-like structure can be observed from the dI/dV maps. The Kondo resonance is only detectable within 5~AA~of the lateral distance from the U atom center, which is much smaller than the distances observed in Co atoms on different surfaces, indicating the more localized 5$f$ states than 3$d$ orbitals. By comparing with density functional theory calculations, we find that the two subatomic features displaying different symmetries originate from the selective hybridization between U 6$d$, 5$f$ orbitals and the $p_z$ orbitals from two inequivalent C atoms of the multilayer graphene.
The thermal decomposition of SiC surface provides, perhaps, the most promising method for the epitaxial growth of graphene on a material useful in the electronics platform. Currently, efforts are focused on a reliable method for the growth of large-a
The early stages of epitaxial graphene layer growth on the Si-terminated 6H-SiC(0001) are investigated by Auger electron spectroscopy (AES) and depolarized Raman spectroscopy. The selection of the depolarized component of the scattered light results
We present electronic structure calculations of few-layer epitaxial graphene nanoribbons on SiC(0001). Trough an atomistic description of the graphene layers and the substrate within the extended H{u}ckel Theory and real/momentum space projections we
Two-dimensional (2D) atom lattices provide model setups for Coulomb correlations inducing competing ground states, partly with topological character. Hexagonal SiC(0001) is an intriguing wide-gap substrate, spectroscopically separated from the overla
This paper has been withdrawn due to the adherance to the double submission policies of a refereed journal. Our apologies.