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Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as spin-momentum locking. The recently discovered hidden spin polarization indicates that specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift to centrosymmetric crystals for potential spintronic applications. Here, combining spin- and angle-resolved photoemission spectroscopy and theoretical calculations, we report distinct spin-layer locking phenomena surrounding different high-symmetry momenta in a centrosymmetric, layered material BiOI. The measured spin is highly polarized along the Brillouin zone boundary, while is almost vanishing around the zone center due to its nonsymmorphic crystal structure. Our work not only demonstrates the existence of hidden spin polarization, but also uncovers the microscopic mechanism of the way spin, momentum and layer locking to each other, shedding lights on the design metrics for future spintronic devices.
The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarizat
Spin-momentum locking is essential to the spin-split Fermi surfaces of inversion-symmetry broken materials, which are caused by either Rashba-type or Zeeman-type spin-orbit coupling (SOC). While the effect of Zeeman-type SOC on superconductivity has
A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects. This concept exploits the spin-layer locking mechanism present in centrosymmetric materials with local
Spin-momentum locking is a unique feature of spin-orbit coupled materials and a key to their promise of applications in spintronics and quantum computation. Much of the existing work has been focused on an orthogonal locking between the directions of
Conversion of pure spin current to charge current in single-layer graphene (SLG) is investigated by using spin pumping. Large-area SLG grown by chemical vapor deposition is used for the conversion. Efficient spin accumulation in SLG by spin pumping e