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تسجيل مستخدم جديدReduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
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GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 % to 10.5 %. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-SI{8 }{micrometer} range. We evidence direct band gap in GeSn with 7 % of Sn and lasing at 2-SI{2.3 }{micrometer} wavelength under optical injection with reproducible lasing thresholds around SI{10 }{kilowattpersquarecentimeter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
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Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um
wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K.
Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the
QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having dimeter ~3.2 mkm and providing free spectral range of ~27 nm and quality factors up to Q~13000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system.
Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical si
gnal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, modulators, eventually, and most importantly efficient and integrated light sources. This chapter reviews recent developments in the fields of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including band structure modelling, material growth and processing techniques.
Lasers differ from other light sources in that they are coherent, and their coherence makes them indispensable to both fundamental research and practical application. In optomechanical cavities, phonon and photon lasing is facilitated by the ability
of photons and phonons to interact intensively and excite one another coherently. The lasing linewidths of both phonons and photons are critical for practical application. However, thus far, these linewidths have not been explored in detail in cavity optomechanical systems. This study investigates the underlying dynamics of lasing in optomechanical cavities and experimentally demonstrates simultaneous photon and phonon lasing with narrow linewidths in a silicon optomechanical crystal cavity. We find that the linewidths can be accounted for by two distinct physical mechanisms in two regimes, namely the normal regime and the reversed regime, where the intrinsic optical decay rate is either larger or smaller than the intrinsic mechanical decay rate. In the normal regime, an ultra-narrow spectral linewidth of 5.4 kHz for phonon lasing at 6.22 GHz can be achieved regardless of the linewidth of the pump light, while these results are counterintuitively unattainable for photon lasing in the reversed regime. These results pave the way towards harnessing the coherence of both photons and phonons in silicon photonic devices and reshaping their spectra, potentially opening up new technologies in sensing, metrology, spectroscopy, and signal processing, as well as in applications requiring sources that offer an ultra-high degree of coherence.
The genesis of lasing, as an evolution of the laser hybrid eigenstates comprised of electromagnetic modes and atomic polarization, is considered. It is shown that the start of coherent generation at the laser threshold is preceded by the formation of
a special hybrid state at the lasing pre-threshold. This special state is characterized by an enhanced coupling among excited atoms and electromagnetic modes. This leads to an increase in the rate of stimulated emission in the special state and, ultimately, to lasing. At the lasing pre-threshold, the transformation of hybrid eigenstates has the features of an exceptional point (EP) observed in non-Hermitian systems. The special state is formed when eigenfrequencies of two hybrid states coalesce or come close to each other. Below the pre-threshold, lifetimes of all hybrid states grow with increasing pump rate. When the pump rate crosses the pre-threshold, resonance trapping occurs with the lifetime of the special state continuing to increase while the lifetimes of all other eigenstates begin to decrease. Consequently, the latter eigenstates do not participate in the lasing. Thus, above the pre-threshold, a laser transitions into the single-mode regime.
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