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Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott neuron-like spiking oscillators, which are of interest for bio-inspired computing. Here we show that shrinking micrometer-sized VO2 oscillators to sub-100 nm effective sizes, achieved using a nanogap cut in a metallic carbon nanotube (CNT) electrode, does not guarantee faster spiking. However, an additional heat source such as Joule heating from the CNT, in combination with small size and heat capacity (defined by the narrow volume of VO2 whose insulator-metal transition is triggered by the CNT), can increase the spiking frequency by ~1000x due to an electro-thermal bifurcation in the nonlinear dynamics. These results demonstrate that nonlinear dynamical switches operate in a complex phase space which can be controlled by careful electro-thermal design, offering new tuning parameters for designing future biomimetic electronics.
Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales underlying the electrically-driven insulator-metal transition is crucial
Time-resolved scanning Kerr microscopy has been used to directly image the magnetization dynamics of nano-contact (NC) spin-torque vortex oscillators (STVOs) when phase-locked to an injected microwave (RF) current. The Kerr images reveal free layer m
The heat flux autocorrelation functions of carbon nanotubes (CNTs) with different radius and lengths is calculated using equilibrium molecular dynamics. The thermal conductance of CNTs is also calculated using the Green-Kubo relation from the linear
The growth of wafer-scale and uniform monoclinic VO2 film was a challenge if considering the multivalent vanadium atom and the various phase structures of VO2 compound. Directly oxidizing metallic vanadium film in oxygen gas seemed to be an easy way,
We studied the size distribution and its scaling behavior of self-assembled InAlAs/AlGaAs quantum dots (QDs) grown on GaAs with the Stranski-Krastanov (SK) mode by molecular beam epitaxy (MBE), at both 480{deg}C and 510{deg}C, as a function of InAlAs