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We study the resistivity of three-dimensional semimetals with linear dispersion in the presence of on-site electron-electron interaction. The well-known quadratic temperature dependence of the resistivity of conventional metals is turned into an unusual $T^6$-behavior. An analogous change affects the thermal transport, preserving the linearity in $T$ of the ratio between thermal and electrical conductivities. These results hold from weak coupling up to the non-perturbative region of the Mott transition. Our findings yield a natural explanation for the hitherto not understood large exponents characterizing the temperature-dependence of transport experiments on various topological semimetals.
The long standing controversy concerning the effect of electron - electron interaction on the electrical conductivity of an ideal graphene sheet is settled. Performing the calculation directly in the tight binding approach without the usual prior red
We establish a scenario where fluctuations of new degrees of freedom at a quantum phase transition change the nature of a transition beyond the standard Landau-Ginzburg paradigm. To this end we study the quantum phase transition of gapless Dirac ferm
We report a detailed analysis of the electrical resistivity exponent of thin films of NdNiO3 as a function of epitaxial strain. Strain-free thin-films show a linear dependence of the resistivity vs temperature, consistent with a classical Fermi gas r
Hesselmann {it et al}.~question one of our conclusions, namely, the suppression of Fermi velocity at the Gross-Neveu critical point for the specific case of vanishing long-range interactions and at zero energy. The possibility they raise could occur
In-plane magnetoresistance for organic massless Dirac electron system (OMDES) $alpha$-(BEDT-TTF)$_2$I$_3$ and $theta$-(BEDT-TTF)$_2$I$_3$ in addition to possible candidates of the OMDES $alpha$-(BETS)$_2$I$_3$ and $alpha$-(BEDT-STF)$_2$I$_3$, was inv