ﻻ يوجد ملخص باللغة العربية
Semiconductor nanowire field-effect transistors represent a promising platform for the development of room-temperature (RT) terahertz (THz) frequency light detectors due to the strong nonlinearity of their transfer characteristics and their remarkable combination of low noise-equivalent powers (< 1 nW/Hz$^{1/2}$) and high responsivities (> 100 V/W). Nano-engineering a NW photodetector combining high sensitivity with high speed (sub-ns) in the THz regime at RT is highly desirable for many frontier applications in quantum optics and nanophotonics, but this requires a clear understanding of the origin of the photo-response. Conventional electrical and optical measurements, however, cannot unambiguously determine the dominant detection mechanism due to inherent device asymmetry that allows different processes to be simultaneously activated. Here, we innovatively capture snapshots of the photo-response of individual InAs nanowires via high spatial resolution (35 nm) THz photocurrent nanoscopy. By coupling a THz quantum cascade laser to scattering-type scanning near-field optical microscopy (s-SNOM) and monitoring both electrical and optical readouts, we simultaneously measure transport and scattering properties. The spatially resolved electric response provides unambiguous signatures of photo-thermoelectric or bolometric currents whose interplay is discussed as a function of photon density and material doping, therefore providing a route to engineer photo-responses by design.
Superconducting quantum circuits are one of the leading quantum computing platforms. To advance superconducting quantum computing to a point of practical importance, it is critical to identify and address material imperfections that lead to decoheren
Counting rate is a key parameter of superconducting nanowire single photon detectors (SNSPD) and is determined by the current recovery time of an SNSPD after a detection event. We propose a new method to study the transient detection efficiency (DE)
We probe the local detection efficiency in a nanowire superconducting single-photon detector along the cross-section of the wire with a spatial resolution of 10 nm. We experimentally find a strong variation in the local detection efficiency of the de
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990s to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has
Intense terahertz (THz) electromagnetic fields have been utilized to reveal a variety of extremely nonlinear optical effects in many materials through nonperturbative driving of elementary and collective excitations. However, such nonlinear photoresp