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The Li2SiO3 compound, a ternary electrolyte compound of Lithium-ion based batteries, exhibits unique geometric and band structures, an atom-dominated energy spectrum, charge densities distributions, atom and orbital-projected density of states, and strong optical responses. The state-of-the-art analysis, based on an ab-initio simulation, have successfully confirmed the concise physical/chemical picture and the orbital bonding in Li-O and Si-O bonds. Additionally, the unusual optical response behavior includes a large redshift of the onset frequency due to the extremely strong excitonic effect, the polarization of optical properties along three-directions, 22 optical excitations structures and the most prominent plasmon mode in terms of the dielectric functions, energy loss functions, absorption coefficients, and reflectance spectra. The close connections of electronic and optical properties can identify a specific orbital hybridization for each distinct excitation channel. The developed theoretical framework will be very appropriate for fully comprehending the diverse phenomena of cathode/electrolyte/anode materials in ion-based batteries.
Lithium metasilicate (Li2SiO3) has attracted considerable interest as a promising electrolyte material for potential use in lithium batteries. However, its electronic properties are still not thoroughly understood. In this work, density functional th
The formation and disassociation of excitons plays a crucial role in any photovoltaic or photocatalytic application. However, excitonic effects are seldom considered in materials discovery studies due to the monumental computational cost associated w
A first principles approach is presented for calculations of optical -- ultraviolet (UV) spectra including excitonic effects. The approach is based on Bethe-Salpeter equation calculations using the textsc{NBSE} code combined with ground-state density
We present results of correlated pseudopotential calculations of an exciton in a pair of vertically stacked InGaAs/GaAs dots. Competing effects of strain, geometry, and band mixing lead to many unexpected features missing in contemporary models. The
The calculated quasiparticle band structure of bulk hexagonal boron nitride using the all-electron GW approximation shows that this compound is an indirect-band-gap semiconductor. The solution of the Bethe-Salpeter equation for the electron-hole two-