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Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.
In this study, the optoelectronic properties of a monolithically integrated series-connected tandem solar cell are simulated. Following the large success of hybrid organic-inorganic perovskites, which have recently demonstrated large efficiencies wit
We report on very high enhancement of thin layers absorption through band-engineering of a photonic crystal structure. We realized amorphous silicon (aSi) photonic crystals, where slow light modes improve absorption efficiency. We show through simula
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Perovskite-silicon tandem solar cells are currently one of the most investigated concepts to overcome the theoretical limit for the power conversion efficiency of silicon solar cells. For monolithic tandem solar cells the available light must be dist
Here we use time-resolved and steady-state optical spectroscopy on state-of-the-art low- and high-bandgap perovskite films for tandems to quantify intrinsic recombination rates and absorption coefficients. We apply these data to calculate the limitin