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Asceding interest of the scientific community in layered hybrid halide perovskites (LHHPs) as materials for innovative photovoltaic and optoelectronic applications led to unprecedented expansion of this family of compounds, reaching now several hundred refined structures. Despite the unique structural diversity of LHHPs, traditional approaches of describing their structures, such as dividing into Dion-Jacobson (DJ) or Ruddlesden-Popper (RP) phases for mostt structures are ambiguous and unquantifiable. Here, we introduced a quantitative layer shift factor (LSF) for a univocal classification and quantitative comparison of the structures. We also developed an algorithm for automatic calculation of the LSF for such structures. We demonstrate the application of the proposed approach for an analysis of correlations between LSF and band gap to reveal structure-property relationships. Our study gives a simple and useful approach to classify of either the layered perovskite-like structures or other layered compounds composed of layers of vertex-connected octahedra as a structural unit.
ABX3 perovskites have attracted intensive research interest in recent years due to their versatile composition and superior optoelectronic properties. Their counterparts, antiperovskites (X3BA), can be viewed as electronically inverted perovskite der
The unprecedented structural flexibility and diversity of inorganic frameworks of layered hybrid halide perovskites (LHHPs) rise up a wide range of useful optoelectronic properties thus predetermining the extraordinary high interest to this family of
Emergent functionalities of structural and topological defects in ferroelectric materials underpin an extremely broad spectrum of applications ranging from domain wall electronics to high dielectric and electromechanical responses. Many of these have
Behaving like atomically-precise two-dimensional quantum wells with non-negligible dielectric contrast, the layered HOIPs have strong electronic interactions leading to tightly bound excitons with binding energies on the order of 500 meV. These stron
Materials combining the optoelectronic functionalities of semiconductors with control of the spin degree of freedom are highly sought after for the advancement of quantum technology devices. Here, we report the paramagnetic Ruddlesden-Popper hybrid p