اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديد422 Million Q Planar Integrated All-Waveguide Resonator with a 3.4 Billion Absorption Limited Q and Sub-MHz Linewidth
146
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
High Q optical resonators are a key component for ultra-narrow linewidth lasers, frequency stabilization, precision spectroscopy and quantum applications. Integration of these resonators in a photonic waveguide wafer-scale platform is key to reducing their cost, size and power as well as sensitivity to environmental disturbances. However, to date, the intrinsic Q of integrated all-waveguide resonators has been relegated to below 150 Million. Here, we report an all-waveguide Si3N4 resonator with an intrinsic Q of 422 Million and a 3.4 Billion absorption loss limited Q. The resonator has a 453 kHz intrinsic linewidth and 906 kHz loaded linewidth, with a finesse of 3005. The corresponding linear loss of 0.060 dB/m is the lowest reported to date for an all-waveguide design with deposited upper cladding oxide. These are the highest intrinsic and absorption loss limited Q factors and lowest linewidth reported to date for a photonic integrated all-waveguide resonator. This level of performance is achieved through a careful reduction of scattering and absorption loss components. We quantify, simulate and measure the various loss contributions including scattering and absorption including surface-state dangling bonds that we believe are responsible in part for absorption. In addition to the ultra-high Q and narrow linewidth, the resonator has a large optical mode area and volume, both critical for ultra-low laser linewidths and ultra-stable, ultra-low frequency noise reference cavities. These results demonstrate the performance of bulk optic and etched resonators can be realized in a photonic integrated solution, paving the way towards photonic integration compatible Billion Q cavities for precision scientific systems and applications such as nonlinear optics, atomic clocks, quantum photonics and high-capacity fiber communications systems on-chip.
قيم البحث
اقرأ أيضاً
We report second harmonic generation from a titanium indiffused lithium niobate waveguide resonator device whose cavity length is locked to the fundamental pump laser using an on-chip phase modulator. The device remains locked for more than 5 minutes
, producing more than 80% of the initial second harmonic power. The stability of the system is seen to be limited by DC-drift, a known effect in many lithium niobate systems that include deposited electrodes. The presented device explores the suitability of waveguide resonators in this platform for use in larger integrated networks.
Waveguide-integrated plasmonics is a growing field with many innovative concepts and demonstrated devices in the visible and near-infrared. Here, we extend this body of work to the mid-infrared for the application of surface-enhanced infrared absorpt
ion (SEIRA), a spectroscopic method to probe molecular vibrations in small volumes and thin films. Built atop a silicon-on-insulator (SOI) waveguide platform, two key plasmonic structures useful for SEIRA are examined using computational modeling: gold nanorods and coaxial nanoapertures. We find resonance dips of 80% in near diffraction-limited areas due to arrays of our structures and up to 40% from a single resonator. Each of the structures are evaluated using the simulated SEIRA signal from poly(methyl methacrylate) and an octadecanethiol self-assembled monolayer. The platforms we present allow for a compact, on-chip SEIRA sensing system with highly efficient waveguide coupling in the mid-IR.
Photonic systems and technologies traditionally relegated to table-top experiments are poised to make the leap from the laboratory to real-world applications through integration. Stimulated Brillouin scattering (SBS) lasers, through their unique line
width narrowing properties, are an ideal candidate to create highly-coherent waveguide integrated sources. In particular, cascaded-order Brillouin lasers show promise for multi-line emission, low-noise microwave generation and other optical comb applications. Photonic integration of these lasers can dramatically improve their stability to environmental and mechanical disturbances, simplify their packaging, and lower cost. While single-order silicon and cascade-order chalcogenide waveguide SBS lasers have been demonstrated, these lasers produce modest emission linewidths of 10-100 kHz. We report the first demonstration of a sub-Hz (~0.7 Hz) fundamental linewidth photonic-integrated Brillouin cascaded-order laser, representing a significant advancement in the state-of-the-art in integrated waveguide SBS lasers. This laser is comprised of a bus-ring resonator fabricated using an ultra-low loss Si3N4 waveguide platform. To achieve a sub-Hz linewidth, we leverage a high-Q, large mode volume, single polarization mode resonator that produces photon generated acoustic waves without phonon guiding. This approach greatly relaxes phase matching conditions between polarization modes, and optical and acoustic modes. Using a theory for cascaded-order Brillouin laser dynamics, we determine the fundamental emission linewidth of the first Stokes order by measuring the beat-note linewidth between and the relative powers of the first and third Stokes orders. Extension to the visible and near-IR wavebands is possible due to the low optical loss from 405 nm to 2350 nm, paving the way to photonic-integrated sub-Hz lasers for visible-light applications.
Active metasurfaces, whose optical properties can be modulated post-fabrication, have emerged as an intensively explored field in recent years. The efforts to date, however, still face major performance limitations in tuning range, optical quality, a
nd efficiency especially for non mechanical actuation mechanisms. In this paper, we introduce an active metasurface platform combining phase tuning covering the full 2$pi$ range and diffraction-limited performance using an all-dielectric, low-loss architecture based on optical phase change materials (O-PCMs). We present a generic design principle enabling switching of metasurfaces between two arbitrary phase profiles and propose a new figure-of-merit (FOM) tailored for active meta-optics. We implement the approach to realize a high-performance varifocal metalens operating at 5.2 $mu$m wavelength. The metalens is constructed using Ge2Sb2Se4Te1 (GSST), an O-PCM with a large refractive index contrast ($Delta$ n > 1) and unique broadband low-loss characteristics in both amorphous and crystalline states. The reconfigurable metalens features focusing efficiencies above 20% at both states for linearly polarized light and a record large switching contrast ratio of 29.5 dB. We further validated aberration-free imaging using the metalens at both optical states, which represents the first experimental demonstration of a non-mechanical active metalens with diffraction-limited performance.
We demonstrate an ultralow loss monolithic integrated lithium niobate photonic platform consisting of dry-etched subwavelength waveguides. We show microring resonators with a quality factor of 10$^7$ and waveguides with propagation loss as low as 2.7 dB/m.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
