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We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications
High mobility phonon-glass semimetal $CuAgSe$ has shown promise in recent years as a potential low-temperature thermoelectric material. It exhibits reasonably strong thermoelectric performance as well as an extremely high carrier mobility, both of wh
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosp
We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with
Doping of semiconductors by impurity atoms enabled their widespread technological application in micro and opto-electronics. For colloidal semiconductor nanocrystals, an emerging family of materials where size, composition and shape-control offer wid
Recently, Chi Xu et al. predicted the phase-filling singularities (PFS) in the optical dielectric function (ODF) of the highly doped $n$-type Ge and confirmed in experiment the PFS associated $E_{1}+Delta_{1}$ transition by advanced textit{in situ} d