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تسجيل مستخدم جديدSeeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport
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Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppress the nucleation and an inner tube is adopted as both a separator and a flow restrictor, favoring the growth of large-size and high-quality TMD single crystals successfully. Three examples are presented, the effective growth of millimeter-sized MoSe2 and MoTe2 single crystals, and the greatly shortened growth period for PtSe2 single crystal, all of which are synthesized in high quality according to detailed characterizations. The mechanism of seeded CVT is discussed. Furthermore, a phototransistor based on exfoliated multi-layered MoSe2 displays excellent photoresponse in ambient conditions, and considerably rapid rise and fall time of 110 and 125 us are obtained. This work paves the way for developing a facile and versatile method to synthesize high-quality TMD single crystals in laboratory, which could serve as favorable functional materials for potential low-dimensional optoelectronics.
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In the crystal growth of transition metal dichalcogenides by the Chemical Vapor Transport method (CVT), the choice of the transport agent plays a key role. We have investigated the effect of various chemical elements and compounds on the growth of Ti
Se2, MoSe2, TaS2 and TaSe2 and found that pure I2 is the most suitable for growing TiSe2, whereas transition metal chlorides perform best with Mo- and Ta- chalcogenides. The use of TaCl5 as a transport agent in the CVT process allows to selectively growth either polymorph of TaS2 and TaSe2 and the optimum growth conditions are reported. Moreover, by using TaCl5 and tuning the temperature and the halogen starting ratio, it was possible to grow whiskers of the compounds TaS2, TaSe2, TaTe2, TaS3 and TaSe3.
Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been succ
essfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology.
We report the growth of large single-crystals of Cu2MnAl, a ferromagnetic Heusler compound suitable for polarizing neutron monochromators, by means of optical floating zone under ultra-high vacuum compatible conditions. Unlike Bridgman or Czochralsky
grown Cu2MnAl, our floating zone grown single-crystals show highly reproducible magnetic properties and an excellent crystal quality with a narrow and homogeneous mosaic spread as examined by neutron diffraction. An investigation of the polarizing properties in neutron scattering suggests a high polarization efficiency, limited by the relatively small sample dimensions studied. Our study identifies optical floating zone under ultra-high vacuum compatible conditions as a highly reproducible method to grow high-quality single-crystals of Cu2MnAl.
Van der Waals epitaxy on the surface of two-dimensional (2D) layered crystals has gained significant research interest for the assembly of well-ordered nanostructures and fabrication of vertical heterostructures based on 2D crystals. Although van der
Waals epitaxial assembly on the hexagonal phase of transition metal dichalcogenides (TMDCs) has been relatively well characterized, a comparable study on the distorted octahedral phase (1T or Td) of TMDCs is largely lacking. Here we investigate the assembly behavior of one-dimensional (1D) AgCN microwires on various distorted TMDC crystals, namely 1T-MoTe2, Td-WTe2, and 1T-ReS2. The unidirectional alignment of AgCN chains is observed on these crystals, reflecting the symmetry of underlying distorted TMDCs. Polarized Raman spectroscopy and transmission electron microscopy directly confirm that AgCN chains display the remarkable alignment behavior along the distorted chain directions of underlying TMDCs. The observed unidirectional assembly behavior can be attributed to the favorable adsorption configurations of 1D chains along the substrate distortion, which is supported by our theoretical calculations and observation of similar assembly behavior from different cyanide chains. The aligned AgCN microwires can be harnessed as facile markers to identify polymorphs and crystal orientations of TMDCs.
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assisted growth (Salt 1.0), the molten salt-assisted vapor-liquid-solid (VLS) growth technique (Salt 2.0) has improved the reproducibility, efficiency and scalability of synthesizing 2D TMDCs. However, the growth of large-area MoSe2 and WTe2 is still quite challenging with the use Salt 2.0 technique. In this study, a renewed Salt 2.0 technique using mixed salts (e.g., Na2MoO4-Na2SeO3 and Na2WO4-Na2TeO3) is developed for the enhanced CVD growth of 2D MoSe2 and WTe2 crystals with large grain size and yield. Continuous monolayer MoSe2 film with grain size of 100-250 {mu}m or isolated flakes up to ~ 450 {mu}m is grown on a halved 2-inch SiO2/Si wafer. Our study further confirms the synergistic effect of Na+ and SeO32- in the enhanced CVD growth of wafer-scale monolayer MoSe2 film. And thus, the addition of Na2SeO3 and Na2TeO3 into the transition metal salts could be a general strategy for the enhanced CVD growth of many other 2D selenides and tellurides.
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