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Ferromagnetic Ni2MnGa-based alloys play an important role in technological fields, such as smart actuators, magnetic refrigeration and robotics. The possibility of obtaining large non-contact deformation induced by an external perturbation is one of its key strengths for applications. However, the search for materials with low cost, practical fabrication procedures and large signal output under small perturbing fields still poses challenges. In the present study we demonstrate that by judicial choice of substitution on the Mn site, an abrupt magnetostructural transition from a paramagnetic austenite phase to a ferromagnetic martensite one can be tuned to close to room temperature achieving large and reproducible strains. The required magnetic field to induce the strain varies from small values, as low as 0.25 T for 297.4 K and 1.6% of strain, to 8 T for 305 K and 2.6% of strain. Our findings point to encouraging possibilities for application of shape memory alloys in relatively inexpensive, scalable polycrystalline materials.
The magnetic-field-dependent spin ordering of strained BiFeO3 films is determined using nuclear resonant scattering and Raman spectroscopy. The critical field required to destroy the cycloidal modulation of the Fe spins is found to be significantly l
Strain induced by a magnetic field is a common phenomenon for ferromagnets, but few antiferromagnets show large strain induced by a magnetic field. On the basis of linear strain measurements of sintered samples of triangular antiferromagnet ACrS2 (A
We show that misfit strain originated from the film-substrate lattice mismatch strongly increases the value of the quadratic magnetoelectric coupling. The giant magnetoelectric coupling, size effects and misfit strain cause strong changes of ferroic
An inelastic neutron scattering study of the lattice dynamics of the martensite phase of the ferromagnetic shape memory alloy, Ni2MnGa, reveals the presence of well-defined phasons associated with the charge density wave (CDW) resulting from Fermi su
A quantized version of the magnetoelectric effect, known as the topological magnetoelectric effect, can exist in a time-reversal invariant topological insulator with all its surface states gapped out by magnetism. This topological phase, called the a