اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدThe optical properties of few-layer InSe
356
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Few-layer InSe draws tremendous research interests owing to the superior electronic and optical properties. It exhibits high carrier mobility up to more than 1000 cm2/Vs at room temperature. The strongly layer-tunable band gap spans a large spectral range from near-infrared to the visible. In this perspective, we systematically review the optical properties of few-layer InSe. Firstly, the intrinsic optical and electronic properties are introduced. Compared to other two-dimensional (2D) materials, the light-matter interaction of few-layer InSe is unusual. The band gap transition is inactive or extremely weak for in-plane polarized light, and the emission light is mainly polarized along the out-of-plane direction. Secondly, we will present several schemes to tune the optical properties of few-layer InSe such as external strain, surface chemical doping and van der Waals (vdW) interfacing. Thirdly, we survey the applications of few-layer InSe in photodetection and heterostructures. Overall, few-layer InSe exhibits great potential not only in fundamental research, but also in electronic and optoelectronic applications.
قيم البحث
اقرأ أيضاً
Optical properties of thin layers of rhenium diselenide (ReSe$_2$) with thickness ranging from mono- (1 ML) to nona-layer (9 MLs) are demonstrated. The photoluminescence (PL) and Raman scattering were measured at low ($T$=5 K) and room ($T$=300 K) te
mperature, respectively. The PL spectra of ReSe$_2$ layers display two well-resolved emission lines, which blueshift by about 120 meV when the layer thickness decreases from 9 MLs to a monolayer. A rich structure of the observed low-energy Raman scattering modes can be explained within a linear chain model. The two phonon modes of intralayer vibrations, observed in Raman scattering spectra at about 120 cm$^{-1}$, exhibit very sensitive and opposite evolution as a function of layer thickness. It is shown that their energy difference can serve as a convenient and reliable tool to determine the thickness of ReSe$_2$ flakes in the few-layer limit.
Since the discovery of graphene -a single layer of carbon atoms arranged in a honeycomb lattice - it was clear that this truly is a unique material system with an unprecedented combination of physical properties. Graphene is the thinnest membrane pre
sent in nature -just one atom thick- it is the strongest material, it is transparent and it is a very good conductor with room temperature charge mobilities larger than the typical mobilities found in silicon. The significance played by this new material system is even more apparent when considering that graphene is the thinnest member of a larger family: the few-layer graphene materials. Even though several physical properties are shared between graphene and its few-layers, recent theoretical and experimental advances demonstrate that each specific thickness of few-layer graphene is a material with unique physical properties.
We have experimentally studied the optical refractive index of few-layer graphene through reflection spectroscopy at visible wavelengths. A laser scanning microscope (LSM) with a coherent supercontinuum laser source measured the reflectivity of an ex
foliated graphene flake on a Si/SiO2 substrate, containing monolayer, bilayer and trilayer areas, as the wavelength of the laser was varied from 545nm to 710nm. The complex refractive index of few-layer graphene, n-ik, was extracted from the reflectivity contrast to the bare substrate and the Fresnel reflection theory. Since the SiO2 thickness enters to the modeling as a parameter, it was precisely measured at the location of the sample. It was found that a common constant optical index cannot explain the wavelength-dependent reflectivity data for single-, double- and three-layer graphene simultaneously, but rather each individual few-layer graphene possesses a unique optical index whose complex values were precisely and accurately determined from the experimental data.
We show that spin-orbit coupling (SOC) in InSe enables the optical transition across the principal band gap to couple with in-plane polarized light. This transition, enabled by $p_{x,y}leftrightarrow p_z$ hybridization due to intra-atomic SOC in both
In and Se, can be viewed as a transition between two dominantly $s$- and $p_z$-orbital based bands, accompanied by an electron spin-flip. Having parametrized $mathbf{kcdot p}$ theory using first principles density functional theory we estimate the absorption for $sigma^{pm}$ circularly polarized photons in the monolayer as $sim 1.5%$, which saturates to $sim 0.3%$ in thicker films ($3-5$ layers). Circularly polarized light can be used to selectively excite electrons into spin-polarized states in the conduction band, which permits optical pumping of the spin polarization of In nuclei through the hyperfine interaction.
We induce surface carrier densities up to $sim7cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn of resistanc
e that we attribute to weak localization in the diffusive regime. By studying this effect as a function of carrier density and with ab-initio calculations we derive the dependence of transport, intervalley and phase coherence scattering lifetimes on total carrier density. We find that electron-electron scattering in the Nyquist regime is the main source of dephasing at temperatures lower than 30K in the $sim10^{13}$cm$^{-2}$ to $sim7 cdot 10^{14}$cm$^{-2}$ range of carrier densities. With the increase of gate voltage, transport elastic scattering is dominated by the competing effects due to the increase in both carrier density and charged scattering centers at the surface. We also tune our devices into a crossover regime between weak and strong localization, indicating that simultaneous tunability of both carrier and defect density at the surface of electric double layer gated materials is possible.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
