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We investigate the electrostatic confinement of charge carriers in a gapped graphene quantum dot in the presence of a magnetic flux. The circular quantum dot is defined by an electrostatic gate potential delimited in an infinite graphene sheet which is then connected to a two terminal setup. Considering different regions composing our system, we explicitly determine the solutions of the energy spectrum in terms of Hankel functions. Using the scattering matrix together with the asymptotic behavior of the Hankel functions for large arguments, we calculate the density of states and show that it has an oscillatory behavior with the appearance of resonant peaks. It is found that the energy gap can controls the amplitude and width of these resonances and affect their location in the density of states profile.
We compare the conductance of an undoped graphene sheet with a small region subject to an electrostatic gate potential for the cases that the dynamics in the gated region is regular (disc-shaped region) and classically chaotic (stadium). For the disc
We study a gapped graphene monolayer in a combination of uniform magnetic field and strain-induced uniform pseudomagnetic field. The presence of two fields completely removes the valley degeneracy. The resulting density of states shows a complicated
We calculate the average single particle density of states in graphene with disorder due to impurity potentials. For unscreened short-ranged impurities, we use the non-self-consistent and self-consistent Born and $T$-matrix approximations to obtain t
We study two lattice models, the honeycomb lattice (HCL) and a special square lattice (SQL), both reducing to the Dirac equation in the continuum limit. In the presence of disorder (gaussian potential disorder and random vector potential), we investi
We consider confinement of Dirac fermions in $AB$-stacked bilayer graphene by inhomogeneous on-site interactions, (pseudo-)magnetic field or inter-layer interaction. Working within the framework of four-band approximation, we focus on the systems whe