اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدSign-reversal electron magnetization in Mn-doped semiconductor structures
118
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
The diversity of various manganese types and its complexes in the Mn-doped ${rm A^{III}B^V}$ semiconductor structures leads to a number of intriguing phenomena. Here we show that the interplay between the ordinary substitutional Mn acceptors and interstitial Mn donors as well as donor-acceptor dimers could result in a reversal of electron magnetization. In our all-optical scheme the impurity-to-band excitation via the Mn dimers results in direct orientation of the ionized Mn-donor $d$ shell. A photoexcited electron is then captured by the interstitial Mn and the electron spin becomes parallel to the optically oriented $d$ shell. That produces, in the low excitation regime, the spin-reversal electron magnetization. As the excitation intensity increases the capture by donors is saturated and the polarization of delocalized electrons restores the normal average spin in accordance with the selection rules. A possibility of the experimental observation of the electron spin reversal by means of polarized photoluminescence is discussed.
قيم البحث
اقرأ أيضاً
Mn-doped SrTiO_3.0, when synthesized free of impurities, is a paramagnetic insulator with interesting dielectric properties. Since delocalized charge carriers are known to promote ferromagnetism in a large number of systems via diverse mechanisms, we
have looked for the possibility of any intrinsic, spontaneous magnetization by simultaneous doping of Mn ions and electrons into SrTiO_3 via oxygen vacancies, thereby forming SrTi_(1-x)Mn_xO_(3-d), to the extent of making the doped system metallic. We find an absence of any enhancement of the magnetization in the metallic sample when compared with a similarly prepared Mn doped, however, insulating sample. Our results, thus, are not in agreement with a recent observation of a weak ferromagnetism in metallic Mn doped SrTiO_3 system.
Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be
sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices.
We demonstrate the magnetization reversal features in NiFe/IrMn/NiFe thin-film structures with 40% and 75% relative content of Ni in Permalloy in the temperature range from 80 K to 300 K. At the descending branches of the hysteresis loops, the magnet
ization reversal sequence of the two ferromagnetic layers is found to depend on the type of NiFe alloy. In the samples with 75% relative content of Ni, the bottom ferromagnetic layer reverses prior to the top one. On the contrary, in the samples with 40% of Ni, the top ferromagnetic layer reverses prior to the bottom one. These tendencies of magnetization reversal are preserved in the entire range of temperatures. These distinctions can be explained by the morphological and structural differences of interfaces in the samples based on two types of Permalloy.
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK
to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
We demonstrate a quasi ballistic switching of the magnetization in a microscopic mag-neto resistive memory cell. By means of time resolved magneto transport we follow the large angle precession of the free layer magnetization of a spin valve cell upo
n applica-tion of transverse magnetic field pulses. Stopping the field pulse after a 180 degree precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultra fast limit of field induced magnetization reversal.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
