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High-harmonic generation (HHG), which is generation of multiple optical harmonic light, is an unconventional nonlinear optical phenomenon beyond perturbation regime. HHG, which was initially observed in gaseous media, has recently been demonstrated in solid state materials. How to control the extreme nonlinear optical phenomena is a challenging subject. Compared to atomic gases, solid state materials have advantages in controlling electronic structures and carrier injection. Here, we demonstrate control of HHG by tuning electronic structure and carrier injection using single-walled carbon nanotubes (SWCNTs). We reveal systematic changes in the high-harmonic spectra of SWCNTs with a series of electronic structures from a metal to a semiconductor. We demonstrate enhancement or reduction of harmonic generation by more than one order of magnitude by tuning electron and hole injection into the semiconductor SWCNTs through electrolyte gating. These results open a way to control HHG within the concept of field effect transistor devices.
Films of the topological insulator Bi2Se3 are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy. Quantum
We theoretically investigate the piezo-optic effect of high-harmonic generation (HHG) in shear-strained semiconductors. By focusing on a typical semiconductor, GaAs, we show that there is optical activity, meaning different responses to right-handed
Light with light control of surface plasmon polaritons is theoretically demonstrated. A barely simple and compact source of these waves consists in a finite number of slits (evenly spaced) perforating a metal film. The system scatters electromagnetic
Efficient frequency conversion techniques are crucial to the development of plasmonic metasurfaces for information processing and signal modulation. In principle, nanoscale electric-field confinement in nonlinear materials enables higher harmonic con
The process of tunneling injection is known to improve the dynamical characteristics of quantum well and quantum dot lasers; in the latter, it also improves the temperature performance. The advantage of the tunneling injection process stems from the