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Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3 (SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6 octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.
Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like orthorhom
The spin-orbit coupling and electron correlation in perovskite SrIrO3 (SIO) strongly favor new quantum states and make SIO very attractive for next generation quantum information technology. In addition, the small electronic band-width offers the pos
Magneto-transport properties of SrIrO$_3$ thin films epitaxially grown on SrTiO$_3$, using reactive RF sputtering, are investigated. A large anisotropy between the in-plane and the out-of-plane resistivities is found, as well as a signature of the su
We present a comparison of the in-plane length scale over which charge and magnetism are correlated in (La0.4Pr0.6)1-xCaxMnO3 films with x = 0.33 and 0.375, across the metal to insulator transition (MIT) temperature. We combine electrical transport (
5d transition-metal-based oxides display emergent phenomena due to the competition between the relevant energy scales of the correlation, bandwidth, and most importantly, the strong spin-orbit coupling (SOC). Starting from the prediction of novel oxi