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We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is demonstrated. Structural and chemical studies using by x-ray diffraction, transmission electron microscopy, scanning tunneling microscopy and x-ray photoelectron spectroscopy indicate high quality thin films. Further studies show that monolayer VSe$_2$ films on GaAs are not air-stable and are susceptible to oxidation within a matter of hours, which indicates that a protective capping layer should be employed for device applications. This work demonstrates that VSe$_2$, a candidate van der Waals material for possible spintronic and electronic applications, can be integrated with III-V semiconductors via epitaxial growth for 2D/3D hybrid devices.
The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As exemplified by th
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside the bulk of the material. The surface states are spin polarized, protected by the time-inversion symmetry, an
The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D spintronics and valley-related magnetic phenomena. We report here a bo
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy of the laye
The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) s