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We present an investigation of the influence of low-levels of chemical substitution on the magnetic ground state and N{ e}el skyrmion lattice (SkL) state in GaV$_4$S$_{8-y}$Se$_y$, where $y =0, 0.1, 7.9$, and $8$. Muon-spin spectroscopy ($mu$SR) measurements on $y=0$ and 0.1 materials reveal the magnetic ground state consists of microscopically coexisting incommensurate cycloidal and ferromagnetic environments, while chemical substitution leads to the growth of localized regions of increased spin density. $mu$SR measurements of emergent low-frequency skyrmion dynamics show that the SkL exists under low-levels of substitution at both ends of the series. Skyrmionic excitations persist to temperatures below the equilibrium SkL in substituted samples, suggesting the presence of skyrmion precursors over a wide range of temperatures.
Polycrystalline members of the GaV$_4$S$_{8-y}$Se$_y$ family of materials with small levels of substitution between $0 leq y leq 0.5$ and $7.5 leq yleq 8$ have been synthesized in order to investigate their magnetic and structural properties. Substit
We report small-angle neutron scattering studies of the lacunar spinel GaV$_4$S$_8$, which reveal the long-wavelength magnetic states to be cycloidally modulated. This provides direct support for the formation of Neel-type skyrmions recently claimed
The orientation of Neel-type skyrmions in the lacunar spinels GaV$_4$S$_8$ and GaV$_4$Se$_8$ is tied to the polar axes of their underlying crystal structure through the Dzyaloshinskii-Moriya interaction. In these crystals, the skyrmion lattice phase
We report on the anomalous magnetization dynamics of the cycloidally-modulated spin textures under the influence of uniaxial anisotropy in multiferroic $mathrm{GaV_4S_8}$. The temperature and field dependence of the linear ac susceptibility [$chi_{1o
ZrSiS is a nodal-line semimetal, whose electronic band structure contains a diamond-shaped line of Dirac nodes. We carried out a comparative study on the optical conductivity of ZrSiS and related compounds ZrSiSe, ZrSiTe, ZrGeS, and ZrGeTe by reflect