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Magnetic tunnel junctions are nanoscale spintronic devices with microwave generation and detection capabilities. Here we use the rectification effect called spin-diode in a magnetic tunnel junction to wirelessly detect the microwave emission of another junction in the auto-oscillatory regime. We show that the rectified spin-diode voltage measured at the receiving junction end can be reconstructed from the independently measured auto-oscillation and spin diode spectra in each junction. Finally we adapt the auto-oscillator model to the case of spin-torque oscillator and spin-torque diode and we show that accurately reproduces the experimentally observed features. These results will be useful to design circuits and chips based on spintronic nanodevices communicating through microwaves.
Radiofrequency vortex spin-transfer oscillators based on magnetic tunnel junctions with very low resistance area product were investigated. A high power of excitations has been obtained characterized by a power spectral density containing a very shar
The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$propto$$V
We have found that the current rectification effect in triple layer (double barrier) (Ga,Mn)As magnetic tunnel junctions strongly depends on the magnetization alignment. The direction as well as the amplitude of the rectification changes with the ali
Magnetic tunnel junctions (MTJs) are basic building blocks for devices such as magnetic random access memories (MRAMs). The relevance for modern computation of non-volatile high-frequency memories makes ac-transport measurements of MTJs crucial for e
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial antiferro