ترغب بنشر مسار تعليمي؟ اضغط هنا

Pitfalls and prospects of optical spectroscopy to characterize perovskite-transport layer interfaces

246   0   0.0 ( 0 )
 نشر من قبل Eline Hutter
 تاريخ النشر 2019
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Perovskite photovoltaics has witnessed an unprecedented increase in power conversion efficiency over the last decade. The choice of transport layers, through which photo-generated electrons and holes are transported to the electrodes, is a crucial factor for further improving both the device performance and stability. In this perspective, we critically examine the application of optical spectroscopy to characterize the quality of the transport layer-perovskite interface. We highlight the power of complementary studies that use both continuous wave (cw) and time-resolved photoluminescence (PL) to understand non-radiative losses, and additional transient spectroscopies for characterizing the potential for loss-less carrier extraction at the solar cell interfaces. Based on this discussion, we make recommendations on how to extrapolate results from optical measurements to assess the quality of a transport layer, and its impact on solar cell efficiency.

قيم البحث

اقرأ أيضاً

Charge transport layers (CTLs) are key components of diffusion controlled perovskite solar cells, however, they can induce additional non-radiative recombination pathways which limit the open circuit voltage (V_OC) of the cell. In order to realize th e full thermodynamic potential of the perovskite absorber, both the electron and hole transport layer (ETL/HTL) need to be as selective as possible. By measuring the quasi-Fermi level splitting (QFLS) of perovskite/CTL heterojunctions, we quantify the non-radiative interfacial recombination current for a wide range of commonly used CTLs, including various hole-transporting polymers, spiro-OMeTAD, metal oxides and fullerenes. We find that all studied CTLs limit the V_OC by inducing an additional non-radiative recombination current that is significantly larger than the loss in the neat perovskite and that the least-selective interface sets the upper limit for the V_OC of the device. The results also show that the V_OC equals the internal QFLS in the absorber layer of (pin, nip) cells with selective CTLs and power conversion efficiencies of up to 21.4%. However, in case of less selective CTLs, the V_OC is substantially lower than the QFLS which indicates additional losses at the contacts and/or interfaces. The findings are corroborated by rigorous device simulations which outline several important considerations to maximize the V_OC. This work shows that the real challenge to supress non-radiative recombination losses in perovskite cells on their way to the radiative limit lies in the suppression of carrier recombination at the perovskite/CTL interfaces.
Among the n-type metal oxide materials used in the planar perovskite solar cells, zinc oxide (ZnO) is a promising candidate to replace titanium dioxide (TiO2) due to its relatively high electron mobility, high transparency, and versatile nanostructur es. Here, we present the application of low temperature solution processed ZnO/Al-doped ZnO (AZO) bilayer thin film as electron transport layers (ETLs) in the inverted perovskite solar cells, which provide a stair-case band profile. Experimental results revealed that the power conversion efficiency (PCE) of perovskite solar cells were significantly increased from 12.25 to 16.07% by employing the AZO thin film as the buffer layer. Meanwhile, the short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) were improved to 20.58 mA/cm2, 1.09V, and 71.6%, respectively. The enhancement in performance is attributed to the modified interface in ETL with stair-case band alignment of ZnO/AZO/CH3NH3PbI3, which allows more efficient extraction of photogenerated electrons in the CH3NH3PbI3 active layer. Thus, it is demonstrated that the ZnO/AZO bilayer ETLs would benefit the electron extraction and contribute in enhancing the performance of perovskite solar cells.
Transparent conductors-nearly an oxymoron-are in pressing demand, as ultra-thin-film technologies become ubiquitous commodities. As current solutions rely on non-abundant elements, perovskites such as SrVO3 and SrNbO3 have been suggested as next gene ration transparent conductors. Our ab-initio calculations and analytical insights show, however, that reducing the plasma frequency below the visible spectrum by strong electronic correlations-a recently proposed strategy-unavoidably comes at a price: an enhanced scattering and thus a substantial optical absorption above the plasma edge. As a way out of this dilemma we identify several perovskite transparent conductors, relying on hole doping, somewhat larger bandwidths and separations to other bands.
Although the structural phase transitions in single-crystal hybrid methyl-ammonium (MA) lead halide perovskites (MAPbX3, X = Cl, Br, I) are common phenomena, they have never been observed in the corresponding nanocrystals. Here we demonstrate that tw o-photon-excited photoluminescence (PL) spectroscopy is capable of monitoring the structural phase transitions in MAPbX3 nanocrystals because nonlinear susceptibilities govern the light absorption rates. We provide experimental evidence that the orthorhombic-to-tetragonal structural phase transition in a single layer of 20-nm-sized 3D MAPbBr3 nanocrystals is spread out within the 70 - 140 K range. This structural phase instability range arises because, unlike in single-crystal MAPbX3, free rotations of MA ions in the corresponding nanocrystals are no longer restricted by a long-range MA dipole order. The resulting configurational entropy loss can be even enhanced by the interfacial electric field arising due to charge separation at the MAPbBr3/ZnO heterointerface, extending the orthorhombic-to-tetragonal structural phase instability range from 70 to 230 K. We conclude that the weak sensitivity of conventional one-photon-excited PL spectroscopy to the structural phase transitions in 3D MAPbX3 nanocrystals results from the structural phase instability providing negligible distortions of PbX6 octahedra. In contrast, the intensity of two-photon-excited PL and electric-field-induced one-photon-excited PL still remains sensitive enough to weak structural distortions due to the higher rank tensor nature of nonlinear susceptibilities involved. We also show that room-temperature PL originates from the radiative recombination of the optical-phonon vibrationally excited polaronic quasiparticles with energies might exceed the ground-state Frohlich polaron and Rashba energies due to optical-phonon bottleneck.
Spin backflow and spin-memory loss have been well established to considerably lower the interfacial spin transmissivity of metallic magnetic interfaces and thus the energy efficiency of spin-orbit torque technologies. Here we report that spin backflo w and spin-memory loss at Pt-based heavy metal/ferromagnet interfaces can be effectively eliminated by inserting an insulating paramagnetic NiO layer of optimum thickness. The latter enables the thermal magnon-mediated essentially unity spin-current transmission at room temperature due to considerably enhanced effective spin-mixing conductance of the interface. As a result, we obtain dampinglike spin-orbit torque efficiency per unit current density of up to 0.8 as detected by the standard technology ferromagnet FeCoB and others, which reaches the expected upper-limit spin Hall ratio of Pt. We establish that Pt/NiO and Pt-Hf/NiO are two energy-efficient, integration-friendly, and high-endurance spin-current generators that provide >100 times greater energy efficiency than sputter-deposited topological insulators BiSb and BiSe. Our finding will benefit spin-orbitronic research and advance spin-torque technologies.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا