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By using the self-consistent Born approximation, we investigate disorder effect induced by the short-range impurities on the band-gap in two-dimensional Dirac systems with the higher order terms in momentum. Starting from the Bernevig-Hughes-Zhang (BHZ) model, we calculate the density-of-states as a function of the disorder strength. We show that due to quadratic corrections to the Dirac Hamiltonian, the band-gap is always affected by the disorder even if the system is gapless in the clean limit. Finally, we explore the disorder effects by using an advanced effective Hamiltonian describing the side maxima of the valence subband in HgTe~quantum wells. We show that the band-gap and disorder-induced topological phase transition in the real structures may differ significantly from those predicted within the BHZ model.
The topological property in one dimension (1D) is protected by symmetry. Based on a concrete model, we show that since a 1D topological model usually contain two of the three Pauli matrix, the left one automatically become the protecting symmetry. We
Given the consensus that pressure improves cation order in most of known materials, a discovery of pressure-induced disorder could require reconsideration of order-disorder transition in solid state physics/chemistry and geophysics. Double perovskite
We report the experimental realization of a correlated insulating phase in 2D GaAs/AlGaAs heterostructures at low electron densities in a limited window of background disorder. This has been achieved at mesoscopic length scales, where the insulating
We study the spin Coulomb drag in a quasi-two-dimensional electron gas beyond the random phase approximation (RPA). We find that the finite transverse width of the electron gas causes a significant reduction of the spin Coulomb drag. This reduction,
By means of synchrotron X-ray diffraction, we studied the effect of high pressure, P, up to 13 GPa on the room temperature crystal structure of superconducting CaC6. In this P range, no change of the pristine space group symmetry, textit{R=3m}, is fo