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تسجيل مستخدم جديدInterfacial-Redox-Induced Tuning of Superconductivity in YBa$_{2}$Cu$_{3}$O$_{7-{delta}}$
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Solid state ionic approaches for modifying ion distributions in getter/oxide heterostructures offer exciting potentials to control material properties. Here we report a simple, scalable approach allowing for total control of the superconducting transition in optimally doped YBa$_{2}$Cu$_{3}$O$_{7-{delta}}$ (YBCO) films via a chemically-driven ionic migration mechanism. Using a thin Gd capping layer of up to 20 nm deposited onto 100 nm thick epitaxial YBCO films, oxygen is found to leach from deep within the YBCO. Progressive reduction of the superconducting transition is observed, with complete suppression possible for a sufficiently thick Gd layer. These effects arise from the combined impact of redox-driven electron doping and modification of the YBCO microstructure due to oxygen migration and depletion. This work demonstrates an effective ionic control of superconductivity in oxides, an interface induced effect that goes well into the quasi-bulk regime, opening up possibilities for electric field manipulation.
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The magneto-optical imaging technique is used to visualize the penetration of the magnetic induction in YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin films during surface resistance measurements. The in-situ surface resistance measurements were performed at 7
GHz using the dielectric resonator method. When only the microwave magnetic field $H_{rf}$ is applied to the superconductor, no $H_{rf}$-induced vortex penetration is observed, even at high rf power. In contrast, in the presence of a constant magnetic field superimposed on $H_{rf}$ we observe a progression of the flux front as $H_{rf}$ is increased. A local thermometry method based on the measurement of the resonant frequency of the dielectric resonator placed on the YBa$_{2}$Cu$_{3}$O$_{7-delta}$ thin film shows that the $H_{rf}$--induced flux penetration is due to the increase of the film temperature.
We use electromigration (EM) to tune the oxygen content of YBa$_2$Cu$_3$O$_{7-delta}$ nanowires. During EM, the dopant oxygen atoms in the nanowire are displaced under the combined effect of electrostatic force and Joule heating. The EM current can b
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YBa$_{2}$Cu$_{3}$O$_{7-{delta}}$ coated conductors (CCs) have achieved high critical current densities ($textit{J}_{c}$) that can be further increased through the introduction of additional defects using particle irradiation. However, these gains are
accompanied by increases in the flux creep rate, a manifestation of competition between the different types of defects. Here, we study this competition to better understand how to design pinning landscapes that simultaneously increase $textit{J}_{c}$ and reduce creep. CCs grown by metal organic deposition show non-monotonic changes in the temperature-dependent creep rate, $textit{S}(textit{T})$. Notably, in low fields, there is a conspicuous dip to low $textit{S}$ as temperature ($textit{T}$) increases from ~20 K to ~65 K. Oxygen-, proton-, and Au-irradiation substantially increase $textit{S}$ in this temperature range. Focusing on an oxygen-irradiated CC, we investigate the contribution of different types of irradiation-induced defects to the flux creep rate. Specifically, we study $textit{S}(textit{T})$ as we tune the relative density of point defects to larger defects by annealing both an as-grown and an irradiated CC in O$_{2}$ at temperatures $textit{T}_{A}$ = 250${deg}$C to 600${deg}$C. We observe a steady decrease in $textit{S}$($textit{T}$ > 20 K) with increasing $textit{T}_{A}$, unveiling the role of pre-existing nanoparticle precipitates in creating the dip in $textit{S}(textit{T})$ and point defects and clusters in increasing $textit{S}$ at intermediate temperatures.
Most measurements of critical current densities in YBa$_2$Cu$_3$O$_{7-delta}$ thin films to date have been performed on films where the textit{c}-axis is grown normal to the film surface. With such films, the analysis of the dependence of $j_c$ on th
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