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Antiferromagnets are outstanding candidates for the next generation of spintronic applications, with great potential for downscaling and decreasing power consumption. Recently, the manipulation of bulk properties of antiferromagnets has been realized by several different approaches. However, the interfacial spin order of antiferromagnets is an important integral part of spintronic devices, thus the successful control of interfacial antiferromagnetic spins is urgently desired. Here, we report the high controllability of interfacial spins in antiferromagnetic / ferromagnetic / heavy metal heterostructure devices using spin-orbit torque (SOT) assisted by perpendicular or longitudinal magnetic fields. Switching of the interfacial spins from one to another direction through multiple intermediate states is demonstrated. The field-free SOT-induced switching of antiferromagnetic interfacial spins is also observed, which we attribute to the effective built-in out-of-plane field due to unequal upward and downward interfacial spin populations. Our work provides a precise way to modulate the interfacial spins at an antiferromagnet / ferromagnet interface via SOT, which will greatly promote innovative designs for next generation spintronic devices.
Magnetization dynamics in W/CoFeB, CoFeB/Pt and W/CoFeB/Pt multilayers was investigated using spin-orbit-torque ferromagnetic resonance (SOT-FMR) technique. An analytical model based on magnetization dynamics due to SOT was used to fit heavy metal (H
We report the control of vertical magnetization shift (VMS) and exchange bias through spin-orbit torque (SOT) in Pt/Co/Ir25Mn75/Co heterostructure device. The exchange bias accompanying with a large relative VMS of about 30 % is observed after applyi
We use time-resolved (TR) measurements based on the polar magneto-optical Kerr effect (MOKE) to study the magnetization dynamics excited by spin orbit torques in Py (Permalloy)/Pt and Ta/CoFeB bilayers. The analysis reveals that the field-like (FL) s
The manipulation of magnetic properties using either electrical currents or gate bias is the key of future high-impact nanospintronics applications such as spin-valve read heads, non-volatile logic, and random-access memories. The current technology
An electric current in the presence of spin-orbit coupling can generate a spin accumulation that exerts torques on a nearby magnetization. We demonstrate that, even in the absence of materials with strong bulk spin-orbit coupling, a torque can arise