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A gear effect is demonstrated at parallel and cross junctions between boron nitride nanotubes (BNNTs) via atomistic simulations. The atoms of neighboring BNNTs are meshed together at the junctions like gear teeth through long-range non-covalent interaction, which are shown to be able to transmit motion and power. The sliding motion of a BNNT can be spontaneously translated to rotating motion of an adjoining one or viceversa at a well-defined speed ratio. The transmittable motion and force strongly depend on the helical lattice structure of BNNTs represented by a chiral angle. The motion transmission efficiency of the parallel junctions increases up to a maximum for certain BNNTs depending on displacement rates. It then decreases with increasing chiral angles. For cross junctions, the angular motion transmission ratio increases with decreasing chiral angles of the driven BNNTs, while the translational one exhibits the opposite trend.
High pressure Raman experiments on Boron Nitride multi-walled nanotubes show that the intensity of the vibrational mode at ~ 1367 cm-1 vanishes at ~ 12 GPa and it does not recover under decompression. In comparison, the high pressure Raman experiment
Two-dimensional materials are characterised by a number of unique physical properties which can potentially make them useful to a wide diversity of applications. In particular, the large thermal conductivity of graphene and hexagonal boron nitride ha
Single- and multi-walled molybdenum disulfide (MoS$_2$) nanotubes have been coaxially grown on small diameter boron nitride nanotubes (BNNTs) which were synthesized from heteronanotubes by removing single-walled carbon nanotubes (SWCNTs), and systema
Quantum emitters in hexagonal boron nitride (hBN) are promising building blocks for the realization of integrated quantum photonic systems. However, their spectral inhomogeneity currently limits their potential applications. Here, we apply tensile st
Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. Fo