ﻻ يوجد ملخص باللغة العربية
Antiferromagnetic (AFM) spintronics exploits the Neel vector as a state variable for novel spintronic devices. Recent studies have shown that the field-like and antidamping spin-orbit torques (SOT) can be used to switch the Neel vector in antiferromagnets with proper symmetries. However, the precise detection of the Neel vector remains a challenging problem. In this letter, we predict that the nonlinear anomalous Hall effect (AHE) can be used to detect the Neel vector in most compensated antiferromagnets supporting the antidamping SOT. We show that the magnetic crystal group symmetry of these antiferromagnets combined with spin-orbit coupling produce a sizable Berry curvature dipole and hence the nonlinear AHE. As a specific example, we consider half-Heusler alloy CuMnSb, which Neel vector can be switched by the antidamping SOT. Based on density functional theory calculations, we show that the nonlinear AHE in CuMnSb results in a measurable Hall voltage under conventional experimental conditions. The strong dependence of the Berry curvature dipole on the Neel vector orientation provides a new detection scheme of the Neel vector based on the nonlinear AHE. Our predictions enrich the material platform for studying non-trivial phenomena associated with the Berry curvature and broaden the range of materials useful for AFM spintronics.
We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet$|$platinum (YIG$|$Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model analysis, we pre
Exploration of the novel relationship between magnetic order and topological semimetals has received enormous interest in a wide range of both fundamental and applied research. Here we predict that soft ferromagnetic (FM) material EuB6 can achieve mu
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to ferroelectric material
Quantum anomalous Hall effect (QAHE) has been experimentally observed in magnetically doped topological insulators. However, ultra-low temperature (usually below 300 mK), which is mainly attributed to inhomogeneous magnetic doping, becomes a daunting