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Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We demonstrated that the spin Hall conductivity (SHC) can be further tuned by ferroelectricity based on the density functional theory calculations. The spin texture variation driven by the electric fields was elucidated from the symmetry point of view, highlighting the interlocked spin and orbital degrees of freedom. We observed that the origin of SHC can be attributed to the Rashba effect and the intrinsic spin-orbit coupling. The magnitude of one component of SHC {sigma}_xy^z can reach as large as 100 {hbar}/e/({Omega}cm) in the vicinity of the band edge, which is promising for engineering spintronic devices. Our work on tunable spin transport properties via the ferroelectric polarization brings novel assets into the field of spintronics.
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose. We show tha
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including ferroelectric s
A comprehensive mapping of the spin polarization of the electronic bands in ferroelectric a-GeTe(111) films has been performed using a time-of-flight momentum microscope equipped with an imaging spin filter that enables a simultaneous measurement of
Kubo formulas for Hall, transverse thermoelectric and thermal Hall conductivities are simplified into on-shell commutators of degeneracy projected polarizations. The new expressions are computationally economical, and apply to general Hamiltonians wi