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We study the influence of transverse electric fields on the interfacial forces between a graphene layer and a carbon nanotube tip by means of atomistic simulations, in which a Gaussian regularized charge-dipole potential is combined with classical force fields. A significant effect of the field-induced electric charge on the normal force is observed. The normal pressure is found to be sensitive to the presence of a transverse electric field, while the friction force remains relatively invariant for the here-used field intensities. The contact can even be turned to have a negative coefficient of friction in a constant-distance scenario when the field strength reaches a critical value, which increases with decreasing tip-surface distance. These results shed light on how the frictional properties of nanomaterials can be controlled via applied electric fields.
To determine the friction coefficient of graphene, micro-scale scratch tests are conducted on exfoliated and epitaxial graphene at ambient conditions. The experimental results show that the monolayer, bilayer, and trilayer graphene all yield friction
We report that the {pi}-electrons of graphene can be spin-polarized to create a phase with a significant spin-orbit gap at the Dirac point (DP) using a graphene-interfaced topological insulator hybrid material. We have grown epitaxial Bi2Te2Se (BTS)
The effect of oxygen adsorption on the local structure and electronic properties of monolayer graphene grown on SiC(0001) has been studied by means of Low Energy Electron Microscopy (LEEM), microprobe Low Energy Electron Diffraction (muLEED) and micr
Graphene, as a promising material of post-silicon electronics, opens a new paradigm for the novel electronic properties and device applications. On the other hand, the 2D feature of graphene makes it technically challenging to be integrated into 3D t
We use the tight-binding model and the random-phase approximation to investigate the intrinsic plasmon in silicene. At finite temperatures, an undamped plasmon is generated from the interplay between the intraband and the interband-gap transitions. T