اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدA large-scale first-principles quantum transport simulation method using plane waves
81
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
As the characteristic lengths of advanced electronic devices are approaching the atomic scale, ab initio simulation method, with fully consideration of quantum mechanical effects, becomes essential to study the quantum transport phenomenon in them. However, current widely used non-equilibrium Greens function (NEGF) approach is based on atomic basis set, which usually can only study small system with less than 1000 atoms in practice. Here we present a large-scale quantum transport simulation method using plane waves basis, based on the previously developed plane wave approach (Phys. Rev. B 72, 045417). By applying several high-efficiency parallel algorithms, such as linear-scale ground-state density function theory (DFT) algorithm, folded spectrum method, and filtering technique, we demonstrate that our new method can simulate the system with several thousands of atoms. We also use this method to study several nanowires with about 4000 copper atoms, and show how the shape and point defect affect the transport properties of them. Such quantum simulation method will be useful to investigate and design nanoscale devices, especially the on-die interconnects.
قيم البحث
اقرأ أيضاً
Multi-scale computational approaches are important for studies of novel, low-dimensional electronic devices since they are able to capture the different length-scales involved in the device operation, and at the same time describe critical parts such
as surfaces, defects, interfaces, gates, and applied bias, on a atomistic, quantum-chemical level. Here we present a multi-scale method which enables calculations of electronic currents in two-dimensional devices larger than 100 nm$^2$, where multiple perturbed regions described by density functional theory (DFT) are embedded into an extended unperturbed region described by a DFT-parametrized tight-binding model. We explain the details of the method, provide examples, and point out the main challenges regarding its practical implementation. Finally we apply it to study current propagation in pristine, defected and nanoporous graphene devices, injected by chemically accurate contacts simulating scanning tunneling microscopy probes.
We present a fast and stable numerical technique to obtain the self-energy terms of electrodes for first-principles electron-transport calculations. Although first-principles calculations based on the real-space finite-difference method are advantage
ous for execution on massively parallel computers, large-scale transport calculations are hampered by the computational cost and numerical instability of the computation of the self-energy terms. Using the orthogonal complement vectors of the space spanned by the generalized Bloch waves that actually contribute to transport phenomena, the computational accuracy of transport properties is significantly improved with a moderate computational cost. To demonstrate the efficiency of the present technique, the electron-transport properties of a Stone-Wales (SW) defect in graphene and silicene are examined. The resonance scattering of the SW defect is observed in the conductance spectrum of silicene since the $sigma^ast$ state of silicene lies near the Fermi energy. In addition, we found that one conduction channel is sensitive to a defect near the Fermi energy, while the other channel is hardly affected. This characteristic behavior of the conduction channels is interpreted in terms of the bonding network between the bilattices of the honeycomb structure in the formation of the SW defect. The present technique enables us to distinguish the different behaviors of the two conduction channels in graphene and silicene owing to its excellent accuracy.
We develop a first-principles electron-transport simulator based on the Lippmann--Schwinger (LS) equation within the framework of the real-space finite-difference scheme. In our fully real-space based LS (grid LS) method, the ratio expression techniq
ue for the scattering wave functions and the Greens function elements of the reference system is employed to avoid numerical collapse. Furthermore, we present analytical expressions and/or prominent calculation procedures for the retarded Greens function, which are utilized in the grid LS approach. In order to demonstrate the performance of the grid LS method, we simulate the electron-transport properties of the semiconductor/oxide interfaces sandwiched between semi-infinite metal electrodes. The results confirm that the leakage current through the (001)Si/SiO$_2$ model becomes much larger when the dangling-bond (DB) state is induced by a defect in the oxygen layer while that through the (001)Ge/GeO$_2$ model is insensitive to the DB state.
We present a self-contained description of the wave-function matching (WFM) method to calculate electronic quantum transport properties of nanostructures using the Landauer-Buttiker approach. The method is based on a partition of the system between a
central region (conductor) containing $N_S$ sites and an asymptotic region (leads) characterized by $N_P$ open channels. The two subsystems are linearly coupled and solved simultaneously using an efficient sparse linear solver. Invoking the sparsity of the Hamiltonian matrix representation of the central region, we show that the number of operations required by the WFM method in conductance calculations scales with $sim N_Stimes N_P$ for large $N_S$.
We investigate equilibrium and transport properties of a copper phthalocyanine (CuPc) molecule adsorbed on Au(111) and Ag(111) surfaces. The CuPc molecule has essentially three localized orbitals close to the Fermi energy resulting in strong local Co
ulomb repulsion not accounted for properly in density functional calculations. Hence, they require a proper many-body treatment within, e.g., the Anderson impurity model (AIM). The occupancy of these orbitals varies with the substrate on which CuPc is adsorbed. Starting from density functional theory calculations, we determine the parameters for the AIM embedded in a noninteracting environment that describes the residual orbitals of the entire system. While correlation effects in CuPc on Au(111) are already properly described by a single orbital AIM, for CuPc on Ag(111) the three orbital AIM problem can be simplified into a two orbital problem coupled to the localized spin of the third orbital. This results in a Kondo effect with a mixed character, displaying a symmetry between SU(2) and SU(4). The computed Kondo temperature is in good agreement with experimental values. To solve the impurity problem we use the recently developed fork tensor product state solver. To obtain transport properties, a scanning tunneling microscope (STM) tip is added to the CuPc molecule absorbed on the surface. We find that the transmission depends on the detailed position of the STM tip above the CuPc molecule in good agreement with differential conductance measurements.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
