ﻻ يوجد ملخص باللغة العربية
Ultrashort light pulses can selectively excite charges, spins and phonons in materials, providing a powerful approach for manipulating their properties. Here we use femtosecond laser pulses to coherently manipulate the electron and phonon distributions, and their couplings, in the charge density wave (CDW) material 1T-TaSe$_2$. After exciting the material with a short light pulse, spatial smearing of the electrons launches a coherent lattice breathing mode, which in turn modulates the electron temperature. This indicates a bi-directional energy exchange between the electrons and the strongly-coupled phonons. By tuning the laser excitation fluence, we can control the magnitude of the electron temperature modulation, from ~ 200 K in the case of weak excitation, to ~ 1000 K for strong laser excitation. This is accompanied by a switching of the dominant mechanism from anharmonic phonon-phonon coupling to coherent electron-phonon coupling, as manifested by a phase change of $pi$ in the electron temperature modulation. Our approach thus opens up possibilities for coherently manipulating the interactions and properties of quasi-2D and other quantum materials using light.
The interplay of electron-phonon (el-ph) and electron-electron (el-el) interactions in epitaxial graphene is studied by directly probing its electronic structure. We found a strong coupling of electrons to the soft part of the A1g phonon evident by a
We present a comparative, theoretical study of the doping dependence of the critical temperature $T_C$ of the ferromagnetic insulator-metal transition in Gd-doped and O-deficient EuO, respectively. The strong $T_C$ enhancement in Eu$_{1-x}$Gd$_x$O is
We use first-principles methods to study doped strong ferroelectrics (taking BaTiO$_3$ as a prototype). Here we find a strong coupling between itinerant electrons and soft polar phonons in doped BaTiO$_3$, contrary to Anderson/Blounts weakly coupled
We have studied the O 2p valence-band structure of Nb-doped SrTiO3, in which a dilute concentration of electrons are doped into the d0 band insulator, by angle-resolved photoemission spectroscopy (ARPES) measurements. We found that ARPES spectra at t
Density functional theory is generalized to incorporate electron-phonon coupling. A Kohn-Sham equation yielding the electronic density $n_U(mathbf{r})$, a conditional probability density depending parametrically on the phonon normal mode amplitudes $