اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدThermal expansion coefficients of high thermal conducting BAs and BP materials
91
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully facilitate such application, compatible coefficient of thermal expansion (CTE) between the heat spreader and device substrate, in order to minimize the thermal stress, need to be considered. Here we report our experimental CTE studies of BAs and BP in the temperature range from 100K to 1150K, through a combination of X-ray single crystal diffraction and neutron powder diffraction. We demonstrated the room temperature CTE, 3.6 $pm$ 0.15 $times$ 10E-6 /K for BAs and 3.2 $pm$ 0.2 $times$ 10E-6 /K for BP, are more compatible with most of the semiconductors including Si and GaAs, in comparison with diamond, and thus could be better candidates for the future heat spreader materials in power electronic devices.
قيم البحث
اقرأ أيضاً
Through first-principles calculations, the phonon-limited transport properties of cubic boron-V compounds (BP, BAs and BSb) are studied. We find that the high optical phonon frequency in these compounds leads to the substantial suppression of polar s
cattering and the reduction of inter-valley transition mediated by large-wavevector optical phonons, both of which significantly facilitate charge transport. We also discover that BAs simultaneously has a high hole mobility (2110 cm2/V-s) and electron mobility (1400 cm2/V-s) at room temperature, which is rare in semiconductors. Our findings present a new insight in searching high mobility polar semiconductors, and point to BAs as a promising material for electronic and photovoltaic devices in addition to its predicted high thermal conductivity.
We report evidence of the absence of zero thermal expansion in well-characterized high-quality polycrystalline samples of YbGaGe. High-quality samples of YbGaGe were produced from high-purity starting elements and were extensively characterized using
x-ray powder diffraction, differential thermal analysis, atomic emission spectroscopy, magnetization, and neutron powder diffraction at various temperatures. Our sample melts congruently at 920 C. A small amount of Yb2O3 was found in our sample, which explains the behavior of the magnetic susceptibility. These observations rule out the scenario of electronic valence driven thermal expansion in YbGaGe. Our studies indicate that the thermal expansion of YbGaGe is comparable to that of Cu.
We have investigated the anisotropic thermal expansion of graphite using ab-initio calculation of lattice dynamics and anharmonicity of the phonons, which reveal that the negative thermal expansion (NTE) in the a-b plane below 600 K and very large po
sitive thermal expansion along the c-axis up to high temperatures arise due to various phonons polarized along the c-axis. While the NTE arises from the anharmonicity of transverse phonons over a broad energy range up to 60 meV, the large positive expansion along the c-axis occurs largely due to the longitudinal optic phonon modes around 16 meV and a large linear compressibility along the c-axis. The hugely anisotropic bonding in graphite is found to be responsible for wide difference in the energy range of the transverse and longitudinal phonon modes polarized along the c-axis, which are responsible for the anomalous thermal expansion behavior. This behaviour is in contrast to other nearly isotropic hexagonal structures like water-ice, which show anomalous thermal expansion in a small temperature range arising from a narrow energy range of phonons.
MnWO4 has attracted attention because of its ferroelectric property induced by frustrated helical spin order. Strong spin-lattice interaction is necessary to explain ferroelectricity associated with this type of magnetic order.We have conducted therm
al expansion measurements along the a, b, c axes revealing the existence of strong anisotropic lattice anomalies at T1=7.8 K, the temperature of the magnetic lock-in transition into a commensurate low-temperature (reentrant paraelectric) phase. The effect of hydrostatic pressure up to 1.8 GPa on the FE phase is investigated by measuring the dielectric constant and the FE polarization. The low- temperature commensurate and paraelectric phase is stabilized and the stability range of the ferroelectric phase is diminished under pressure.
The promise enabled by BAs high thermal conductivity in power electronics cannot be assessed without taking into account the reduction incurred when doping the material. Using first principles calculations, we determine the thermal conductivity reduc
tion induced by different group IV impurities in BAs as a function of concentration and charge state. We unveil a general trend, where neutral impurities scatter phonons more strongly than the charged ones. $text{C}_{text{B}}$ and $text{Ge}_{text{As}}$ impurities show by far the weakest phonon scattering and retain BAs $kappa$ values of over $sim$ 1000 $text{W}cdottext{K}^{-1}cdottext{m}^{-1}$ even up to high densities making them ideal n-type and p-type dopants. Furthermore, going beyond the doping compensation threshold associated to Fermi level pinning triggers observable changes in the thermal conductivity. This informs design considerations on the doping of BAs, and it also suggests a direct way to determine the onset of compensation doping in experimental samples.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
