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Andreev reflection (AR) in ferromagnet/superconductor junctions is an indispensable spectroscopic tool for measuring spin polarization. We study theoretically how the presence of a thin semiconducting interface in such junctions, inducing Rashba and Dresselhaus spin-orbit coupling, modifies AR processes. The interface gives rise to an effective momentum- and spin-dependent scattering potential, making the probability of AR strongly asymmetric with respect to the sign of the incident electrons transverse momenta. This skew AR creates spatial charge carrier imbalances and transverse Hall currents flow in the ferromagnet. We show that the effect is giant, as compared to the normal regime. We provide a quantitative analysis and a qualitative picture of this phenomenon, and finally show that skew AR also leads to a widely tunable transverse supercurrent response in the superconductor.
We theoretically study the electronic transport through a ferromagnet-Ising superconductor junction. A tight-binding Hamiltonian describing the Ising superconductor is presented. Then by combing the non-equilibrium Greens function method, the express
As charge carriers traverse a single superconductor ferromagnet interface they experience an additional spin-dependent phase angle which results in spin mixing and the formation of a bound state called the Andreev Bound State. This state is an essent
Our previous point-contact Andreev reflection studies of the heavy-fermion superconductor CeCoIn$_5$ using Au tips have shown two clear features: reduced Andreev signal and asymmetric background conductance [1]. To explore their physical origins, we
Sub-gap conductance at a large area junction with a rough interface of a ferromagnet and a high-T$_{C}$ superconductor is superimposed by multiple peaks which is not expected from an ideal point contact Andreev reflection process. We demonstrate this
We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the