اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدA frequency-tunable nanomembrane mechanical oscillator with embedded quantum dots
265
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Hybrid systems consisting of a quantum emitter coupled to a mechanical oscillator are receiving increasing attention for fundamental science and potential applications in quantum technologies. In contrast to most of the presented works, in which the oscillator eigenfrequencies are irreversibly determined by the fabrication process, we present here a simple approach to obtain frequency-tunable mechanical resonators based on suspended nanomembranes. The method relies on a micromachined piezoelectric actuator, which we use both to drive resonant oscillations of a suspended Ga(Al)As membrane with embedded quantum dots and to fine tune their mechanical eigenfrequencies. Specifically, we excite oscillations with frequencies of at least 60 MHz by applying an AC voltage to the actuator and tune the eigenfrequencies by at least 25 times their linewidth by continuously varying the elastic stress state in the membranes through a DC voltage. The light emitted by optically excited quantum dots is used as sensitive local strain gauge to monitor the oscillation frequency and amplitude. We expect that our method has the potential to be applicable to other optomechanical systems based on dielectric and semiconductor membranes possibly operating in the quantum regime.
قيم البحث
اقرأ أيضاً
A strong trend for quantum based technologies and applications follows the avenue of combining different platforms to exploit their complementary technological and functional advantages. Micro and nano-mechanical devices are particularly suitable for
hybrid integration due to the easiness of fabrication at multi-scales and their pervasive coupling with electrons and photons. Here, we report on a nanomechanical technological platform where a silicon chip is combined with an aluminum nitride layer. Exploiting the AlN piezoelectricity, Surface Acoustic Waves are injected in the Si layer where the material has been localy patterned and etched to form a suspended nanostring. Characterizing the nanostring vertical displacement induced by the SAW, we found an external excitation peak efficiency in excess of 500 pm/V at 1 GHz mechanical frequency. Exploiting the long term expertise in silicon photonic and electronic devices as well as the SAW robustness and versatility, our technological platform represents a strong candidate for hybrid quantum systems.
We demonstrate electro-mechanical control of an on-chip GaAs optical beam splitter containing a quantum dot single-photon source. The beam splitter consists of two nanobeam waveguides, which form a directional coupler (DC). The splitting ratio of the
DC is controlled by varying the out-of-plane separation of the two waveguides using electro-mechanical actuation. We reversibly tune the beam splitter between an initial state, with emission into both output arms, and a final state with photons emitted into a single output arm. The device represents a compact and scalable tuning approach for use in III-V semiconductor integrated quantum optical circuits.
We demonstrate experimental results based on time-resolved photoluminescence spectroscopy to determine the oscillator strength (OS) and the internal quantum efficiency (IQE) of InGaAs quantum dots (QDs). Using a strain-reducing layer (SRL) these QDs
can be employed for the manufacturing of single-photon sources (SPS) emitting in the telecom O-Band. The OS and IQE are evaluated by determining the radiative and non-radiative decay rate under variation of the optical density of states at the position of the QD as proposed and applied in J. Johansen et al. Phys. Rev. B 77, 073303 (2008) for InGaAs QDs emitting at wavelengths below 1 $mu$m. For this purpose, we perform measurements on a QD sample for different thicknesses of the capping layer realized by a controlled wet-chemical etching process. From numeric modelling the radiative and nonradiative decay rates dependence on the capping layer thickness, we determine an OS of 24.6 $pm$ 3.2 and a high IQE of about (85 $pm$ 10)% for the long-wavelength InGaAs QDs.
In this study, we report a conceptually novel broadband high-frequency electron spin resonance (HFESR) spectroscopic technique. In contrast to the ordinary force-detected ESR technique, which detects the magnetization change due to the saturation eff
ect, this method measures the magnetization change due to the change of the sample temperature at resonance. To demonstrate its principle, we developed a silicon nitride nanomembrane-based force-detected ESR spectrometer, which can be stably operated even at high magnetic fields. Test measurements were performed for samples with different spin relaxation times. We succeeded in obtaining a seamless ESR spectrum in magnetic fields of 15~T and frequencies of 636~GHz without significant spectral distortion. A high spin sensitivity of $10^{12}$~spins/G$cdot$s was obtained, which was independent of the spin relaxation time. These results show that this technique can be used as a practical method in research fields where the HFESR technique is applicable.
We generalize a proposal for detecting single phonon transitions in a single nanoelectromechanical system (NEMS) to include the intrinsic anharmonicity of each mechanical oscillator. In this scheme two NEMS oscillators are coupled via a term quadrati
c in the amplitude of oscillation for each oscillator. One NEMS oscillator is driven and strongly damped and becomes a transducer for phonon number in the other measured oscillator. We derive the conditions for this measurement scheme to be quantum limited and find a condition on the size of the anharmonicity. We also derive the relation between the phase diffusion back-action noise due to number measurement and the localization time for the measured system to enter a phonon number eigenstate. We relate both these time scales to the strength of the measured signal, which is an induced current proportional to the position of the readout oscillator.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
