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Achieving good quality Ohmic contacts to van der Waals materials is a challenge, since at the interface between metal and van der Waals material, different conditions can occur, ranging from the presence of a large energy barrier between the two materials to the metallization of the layered material below the contacts. In black phosphorus (bP), a further challenge is its high reactivity to oxygen and moisture, since the presence of uncontrolled oxidation can substantially change the behavior of the contacts. In this study, we investigate the influence of the metal used for the contacts to bP against the variability between different flakes and different samples, using three of the most used metals as contacts: Chromium, Titanium, and Nickel. Using the transfer length method, from an analysis of ten devices, both at room temperature and at low temperature, Ni results to be the best metal for Ohmic contacts to bP, providing the lowest contact resistance and minimum scattering between different devices. Moreover, we investigate the gate dependence of the current-voltage characteristics of these devices. In the accumulation regime, we observe good linearity for all metals investigated.
As a high mobility two-dimensional semiconductor with strong structural and electronic anisotropy, atomically thin black phosphorus (BP) provides a new playground for investigating the quantum Hall (QH) effect, including outstanding questions such as
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases. Although th
We report the fabrication of ionic liquid (IL) gated field-effect transistors (FETs) consisting of bilayer and few-layer MoS2. Our transport measurements indicate that the electron mobility about 60 cm2V-1s-1 at 250 K in ionic liquid gated devices ex
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence effici
We realize p-p-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both ful