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Studies of possible localization of phonons in nanomaterials have gained importance in recent years in the context of thermoelectricity where phonon-localization can reduce thermal conductivity, thereby improving the efficiency of thermoelectric devices. However, despite significant efforts, phonon-localization has not yet been observed experimentally in real materials. Here we propose that surface-roughness dominated nanowires are ideal candidates to observe localization of phonons, and show numerically that the space and time evolution of the energy generated by a heat-pulse injected at a given point shows clear signatures of phonon localization. We suggest that the same configuration might allow experimental observation of localization of phonons. Our results confirm the universality in the surface-roughness dominated regime proposed earlier, which allows us to characterize the strength of disorder by a single parameter combining the width of the wire as well as the mean height of the corrugation and its correlation length.
Experimental observation of highly reduced thermal conductivity in surface-roughness dominated silicon nanowires have generated renewed interest in low-dimensional thermoelectric devices. Using a previous work where the scattering of phonons from a r
We analyze, both theoretically and numerically, the temperature dependent thermal conductivity k{appa} of two-dimensional nanowires with surface roughness. Although each sample is characterized by three independent parameters - the diameter (width) o
Suppressing phonon propagation in nanowires is an essential goal towards achieving efficient thermoelectric devices. Recent experiments have shown unambiguously that surface roughness is a key factor that can reduce the thermal conductivity well belo
Andos model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribu
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scatterin