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In condensed matter physics many features can be understood in terms of their topological properties. Here we report evidence of a topological quantum transition driven by the charge-phonon coupling in the spinless Haldane model on a honeycomb lattice, a well-known prototypical model of Chern insulator. Starting from parameters describing the topological phase in the bare Haldane model, we show that the increasing of the strength of the charge lattice coupling drives the system towards a trivial insulator. The average number of fermions in the Dirac point, characterized by the lowest gap, exhibits a finite discontinuity at the transition point and can be used as direct indicator of the topological quantum transition. Numerical simulations show, also, that the renormalized phonon propagator exhibits a two peak structure across the quantum transition, whereas, in absence of the mass term in the bare Hadane model, there is indication of a complete softening of the effective vibrational mode signaling a charge density wave instability.
By using the cluster perturbation theory, we investigate the effects of the local electron-phonon interaction in the quantum spin Hall topological insulator described by the half-filled Kane-Mele model on an honeycomb lattice. Starting from the topol
Transition metal dichalcogenides (TMDs) are a class of widely studied 2D layered materials which exist in various polymorphs. The 1T phase of MoTe2 is of prime importance as it has been reported to show quantum spin hall (QSH) behavior with a fairly
Metal-insulator transitions involve a mix of charge, spin, and structural degrees of freedom, and when strongly-correlated, can underlay the emergence of exotic quantum states. Mott insulators induced by the opening of a Coulomb gap are an important
We report time- and angle-resolved photoemission spectroscopy measurements on the topological insulator Bi2Se3. We observe oscillatory modulations of the electronic structure of both the bulk and surface states at a frequency of 2.23 THz due to coher
The metal-insulator transition (MIT) is one of the most dramatic manifestations of electron correlations in materials. Various mechanisms producing MITs have been extensively considered, including the Mott (electron localization via Coulomb repulsion