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The spin-orbit Mott insulator Sr${}_2$IrO${}_4$ has attracted a lot of interest in recent years from theory and experiment due to its close connection to isostructural high-temperature copper oxide superconductors. Despite of not being superconducting its spectral features closely resemble those of the cuprates, including Fermi surface and pseudogap properties. In this article, we review and extend recent work in the theoretical description of the spectral function of pure and electron-doped Sr${}_2$IrO${}_4$ based on a cluster extension of dynamical mean-field theory (oriented-cluster DMFT) and compare it to available angle-resolved photoemission data. Current theories provide surprisingly good agreement for pure and electron-doped Sr${}_2$IrO${}_4$, both in the paramagnetic and antiferromagnetic phases. Most notably, one obtains simple explanations for the experimentally observed steep feature around the $M$ point and the pseudo-gap-like spectral feature in electron-doped Sr${}_2$IrO${}_4$.
We investigate the temporal evolution of electronic states in strontium iridate Sr$_2$IrO$_4$. The time resolved photoemission spectra of intrinsic, electron doped and the hole doped samples are monitored in identical experimental conditions. Our dat
The effect of compression on the magnetic ground state of Sr$_2$IrO$_4$ is studied with x-ray resonant techniques in the diamond anvil cell. The weak interlayer exchange coupling between square-planar 2D IrO$_2$ layers is readily modified upon compre
We show that, contrary to previous belief, the transition to the antiferromagnetic state of Sr$_2$IrO$_4$ in zero magnetic field does show up in the transverse resistivity. We attribute this to a change in transverse integrals associated to the magne
We present a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr$_2$IrO$_4$ upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure displays a
In the context of correlated insulators, where electron-electron interactions (U) drive the localization of charge carriers, the metal-insulator transition (MIT) is described as either bandwidth (BC) or filling (FC) controlled. Motivated by the chall